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Volumn , Issue , 2008, Pages 355-358

Nonvolatile magnetic flip-flop for standby-power-free SoCs

Author keywords

[No Author keywords available]

Indexed keywords

FLIP FLOP CIRCUITS;

EID: 57849093166     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2008.4672095     Document Type: Conference Paper
Times cited : (57)

References (6)
  • 1
    • 51349118603 scopus 로고    scopus 로고
    • Dynamic Voltage and Frequency Scaling (DVFS) Scheme for Multi-Domains Power Management
    • Nov
    • J. Lee, et al.," Dynamic Voltage and Frequency Scaling (DVFS) Scheme for Multi-Domains Power Management," A-SSCC 2007, Nov. 2007, pp. 360-363.
    • (2007) A-SSCC 2007 , pp. 360-363
    • Lee, J.1
  • 2
    • 39749165816 scopus 로고    scopus 로고
    • A 1.92μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors
    • Jun
    • K. Fukuoka, et al.," A 1.92μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors," Symp. VLSI Circuits, Jun. 2007, pp. 128-129.
    • (2007) Symp. VLSI Circuits , pp. 128-129
    • Fukuoka, K.1
  • 3
    • 0242443703 scopus 로고    scopus 로고
    • Design and applications of ferroelectric nonvolatile SRAM and flip-flop with unlimited read/program cycles and stable recall
    • Sep
    • S. Masui, et al.,"Design and applications of ferroelectric nonvolatile SRAM and flip-flop with unlimited read/program cycles and stable recall," CICC 2003, Sep. 2003, pp. 403-406.
    • (2003) CICC 2003 , pp. 403-406
    • Masui, S.1
  • 4
    • 34547331077 scopus 로고    scopus 로고
    • Integration of Spin-RAM technology in FPGA circuits
    • Oct
    • W. Zhao, et al., "Integration of Spin-RAM technology in FPGA circuits," ICSICT '06, Oct. 2006, pp. 799-802.
    • (2006) ICSICT '06 , pp. 799-802
    • Zhao, W.1
  • 5
    • 42149093760 scopus 로고    scopus 로고
    • Performance of write-line inserted MTJ for low-write-current MRAM cell
    • 103, 07A711
    • H. Honjo, et al.,"Performance of write-line inserted MTJ for low-write-current MRAM cell," Journal of Applied Physics 103, 07A711, 2008.
    • (2008) Journal of Applied Physics
    • Honjo, H.1
  • 6
    • 51349088306 scopus 로고    scopus 로고
    • A 250-MHz 1-Mbit embedded MRAM macro using 2T1MTJ cell with bitline separation and half-pitch shift architecture
    • Nov
    • N. Sakimura, et al.," A 250-MHz 1-Mbit embedded MRAM macro using 2T1MTJ cell with bitline separation and half-pitch shift architecture," A-SSCC 2007, Nov. 2007, pp. 216-219.
    • (2007) A-SSCC 2007 , pp. 216-219
    • Sakimura, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.