Effect of the frequency and temperature on the complex impedance spectroscopy (C-V and G-V) of p-ZnGa 2Se 4/n-Si nanostructure heterojunction diode

Journal of Materials Science

Volumn 47, Issue 4, 2012, Pages 1719-1728

  Yahia, I S ^a   Fadel, M ^a   Sakr, G B ^a   Shenouda, S S ^a   Yakuphanoglu, F ^b,c  

^a Ain Shams University   (Egypt)

^b FIRAT UNIVERSITY   (Turkey)

^c KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; BARRIER HEIGHTS; BUILT-IN POTENTIAL; CAPACITANCE VOLTAGE; COMPLEX IMPEDANCE SPECTROSCOPY; DISLOCATION DENSITIES; DOPING CONCENTRATION; ELECTRICAL CHARACTERISTIC; ELECTRONIC APPLICATION; FREQUENCY RANGES; FREQUENCY-DEPENDENT; HETEROJUNCTION DIODES; IMPEDANCE SPECTROSCOPY; INTERFACE STATE; INTERFACE STATE DENSITY; INTERFACES STATE; INTERNAL STRAINS; SERIES RESISTANCES; TEMPERATURE RANGE; UNIT CELLS;

DIODES; ELECTRIC RESISTANCE; HETEROJUNCTIONS; INTERFACE STATES; NANOSTRUCTURES; SEMICONDUCTOR DIODES; SILICON; X RAY DIFFRACTION;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84857645700     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-011-5951-4     Document Type: Article

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