|
Volumn 120, Issue 3, 2011, Pages 563-566
|
Impedance spectroscopy of nanostructure p-ZnGa2Se 4/n-Si heterojunction diode
|
Author keywords
[No Author keywords available]
|
Indexed keywords
DIODES;
HETEROJUNCTIONS;
NANOSTRUCTURES;
SEMICONDUCTOR DIODES;
SPECTROSCOPIC ANALYSIS;
SPECTROSCOPY;
TEMPERATURE;
DIELECTRICAL RELAXATION MECHANISMS;
HETEROJUNCTION DIODES;
IMPEDANCE CHARACTERISTICS;
IMPEDANCE SPECTROSCOPY;
INCREASING TEMPERATURES;
REAL AND IMAGINARY;
RELAXATION MECHANISM;
TEMPERATURE DEPENDENT;
SEMICONDUCTING SELENIUM COMPOUNDS;
|
EID: 80052202707
PISSN: 05874246
EISSN: 1898794X
Source Type: Journal
DOI: 10.12693/APhysPolA.120.563 Document Type: Article |
Times cited : (21)
|
References (17)
|