Interface control of conventional n-type silicon/metal by n-channel organic semiconductor

Microelectronic Engineering

Volumn 87, Issue 10, 2010, Pages 1884-1888

  Yakuphanoglu, Fahrettin ^a  

^a FIRAT UNIVERSITY   (Turkey)

Author keywords

Interfacial state density; Metal oxide semiconductor; Organic layer

Indexed keywords

CAPACITANCE; DIODES; ELECTRIC RESISTANCE; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES;

CONDUCTANCE-FREQUENCY; DOMINANT MECHANISM; ELECTRONIC PARAMETERS; INTERFACE STATE DENSITY; INTERFACIAL STATE DENSITY; METAL OXIDE SEMICONDUCTOR; N-CHANNEL ORGANIC SEMICONDUCTORS; ORGANIC LAYERS;

INTERFACE STATES;

EID: 80053565094     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.021     Document Type: Article

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