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Volumn 84, Issue 10, 1998, Pages 5626-5634

Planar quantum transistor based on 2D-2D tunneling in double quantum well heterostructures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000347053     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368610     Document Type: Article
Times cited : (45)

References (40)
  • 34
    • 85034471203 scopus 로고    scopus 로고
    • note
    • We note that Ref. 24 reported on a pair of gated 2D-2D tunneling structures connected back-to-back by a 2D channel, which was also gated. However, the position of the resonance peak in the I-V did not change with gate voltage, indicating that the gate did not influence the lineup of the 2D energy subbands.
  • 36
    • 85034470870 scopus 로고    scopus 로고
    • unpublished
    • J. Yao et al. (unpublished).
    • Yao, J.1
  • 37
    • 85034464613 scopus 로고    scopus 로고
    • unpublished
    • S. K. Lyo (unpublished).
    • Lyo, S.K.1
  • 40
    • 85034472544 scopus 로고    scopus 로고
    • U.S. Patent Application 08/728 003, filed 9 October 1996
    • J. A. Simmons, M. E. Sherwin, and T. J. Drammond, U.S. Patent Application 08/728 003, filed 9 October 1996.
    • Simmons, J.A.1    Sherwin, M.E.2    Drammond, T.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.