Assessing the composition of hetero-epitaxial islands via morphological analysis: An analytical model matching GeSi/Si(001) data

Journal of Physics Condensed Matter

Volumn 24, Issue 10, 2012, Pages

  Gatti, R ^a,b   Pezzoli, F ^a   Boioli, F ^a   Montalenti, F ^a   Miglio, Leo ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; AVERAGE COMPOSITION; ELASTIC THEORY; ENERGETIC BALANCE; EXPERIMENTAL DATA; EXPERIMENTAL EVOLUTION; FITTING PARAMETERS; GE CONTENT; MORPHOLOGICAL ANALYSIS; MORPHOLOGICAL EVOLUTION; MORPHOLOGICAL STABILITY; SI(0 0 1); SIGE ISLANDS;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GERMANIUM; MOLECULAR BEAM EPITAXY; SILICON ALLOYS; SURFACE CHEMISTRY;

THREE DIMENSIONAL;

EID: 84857433355     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/10/104018     Document Type: Article

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