Si 2H 6 dissociative chemisorption and dissociation on Si(100)-(2×1) and Ge(100)-(2×1)

Journal of Physical Chemistry C

Volumn 115, Issue 50, 2011, Pages 24534-24548

  Veyan, Jean Francois ^a   Choi, Heesung ^a   Huang, Min ^a   Longo, R C ^a   Ballard, Josh B ^b   McDonnell, Stephen ^a   Nadesalingam, Manori P ^a   Dong, Hong ^a   Chopra, Irinder S ^a   Owen, James H G ^b   Kirk, Wiley P ^a   Randall, John N ^b   Wallace, Robert M ^a   Cho, Kyeongjae ^a   Chabal, Yves J ^a  

^a The University of Texas at Dallas   (United States)

^b Zyvex Labs LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SIZES; CONTROLLED DEPOSITION; DECOMPOSITION PATHWAY; DISILANES; DISSOCIATIVE CHEMISORPTION; EXPERIMENTAL DATA; FIRST-PRINCIPLES CALCULATION; GE SURFACES; GE(100); H-TERMINATED SI SURFACES; HYDRIDE ELIMINATION; IN-SITU; MODERATE TEMPERATURE; NANO ELECTROMECHANICAL SYSTEMS; NANO-METER-SCALE; QUANTUM COMPUTING; SCANNING TUNNELING MICROSCOPY (STM); SI ATOMS; SI(001) SURFACES; SI(1 0 0); SOLID SOURCES;

ADSORPTION; CALCULATIONS; CHEMISORPTION; DIMERS; DISSOCIATION; EPITAXIAL GROWTH; GERMANIUM; HYDROGEN; QUANTUM COMPUTERS; QUANTUM OPTICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTAL ATOMIC STRUCTURE;

EID: 84857300245     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp207086u     Document Type: Article

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