SCOPUS 정보 검색 플랫폼

Volumn 382, Issue 1-3, 1997, Pages

A proposed structure of the nucleus for gas-source epitaxial growth of silicon

(5) Owen, J H G a Bowler, D R a Goringe, C M a Miki, K a Briggs, G A D a

Author keywords

Density functional calculations; Growth; Nucleation; Scanning tunneling microscopy; Semi empirical models and model calculations; Silicon; Surface structure and morphology

Indexed keywords

CHEMICAL BONDS; COMPUTATIONAL METHODS; ELECTRONIC DENSITY OF STATES; EPITAXIAL GROWTH; GAS ADSORPTION; MATHEMATICAL MODELS; MORPHOLOGY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; THERMAL EFFECTS;

DENSITY FUNCTIONAL THEORY (DFT);

SEMICONDUCTING SILICON;

EID: 0031164510 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00135-0 Document Type: Article

Times cited : (17)

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