Atomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 919-926

  Lin, D S ^a   Miller, T ^b   Chiang, T C ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012358683     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580623     Document Type: Article

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