Control of strain relaxation behavior of Ge1-xSn x buffer layers

Solid-State Electronics

Volumn 60, Issue 1, 2011, Pages 84-88

  Shimura, Yosuke ^a,b   Takeuchi, Shotaro ^c   Nakatsuka, Osamu ^a   Sakai, Akira ^d   Zaima, Shigeaki ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

^c Covalent Silicon Corporation   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

Epitaxial growth; Germanium; Silicon; Tensile strain; Tin

Indexed keywords

GE SUBSTRATES; IN-PLANE LATTICES; INTERFACIAL MIXING; MISFIT STRAINS; RELAXATION BEHAVIORS; SI SUBSTRATES; STRAIN-RELAXED; STRAINED-GE; SURFACE-ROUGHENING;

BUFFER LAYERS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GERMANIUM; OPTICAL WAVEGUIDES; SEMICONDUCTING SILICON COMPOUNDS; STRAIN RELAXATION; SUBSTRATES; TIN;

TENSILE STRAIN;

EID: 79955525046     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.01.023     Document Type: Article

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