Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 7085% Ge

Journal of Crystal Growth

Volumn 324, Issue 1, 2011, Pages 15-21

  Loo, Roger ^a   Souriau, Laurent ^a   Ong, Patrick ^a   Kenis, Karine ^a   Rip, Jens ^a   Storck, Peter ^b   Buschhardt, Thomas ^b   Vorderwestner, Martin ^b  

^a IMEC   (Belgium)

^b SILTRONIC AG   (Germany)

Author keywords

A1. Interface contamination; A1. Surface roughness; A3. Chemical Vapor Deposition processes; B2. Strained Ge; B2. Virtual substrates

Indexed keywords

A1. INTERFACE CONTAMINATION; A1. SURFACE ROUGHNESS; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; STRAINED-GE; VIRTUAL SUBSTRATES;

ARTS COMPUTING; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; METALLIC COMPOUNDS; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON ALLOYS; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACES;

GERMANIUM;

EID: 79957818766     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.03.030     Document Type: Article

References (26)

1. J. Mitard, et al., in: Proceedings of the Symposium on VLSI Technology, Digest of Technical Papers, 2009, p. 82.
2. M. Caymax, G. Eneman, F. Bellenger, C. Merckling, A. Delabie, G. Wang, R. Loo, E. Simoen, J. Mitard, B. De Jaeger, G. Hellings, K. De Meyer, M. Meuris, M. Heyns, in: Proceedings of the IEEE International Electron Devices Meeting (IEDM), Technical Digest, 2009 p. 461.
3. D.A. Antoniadis, A. Khakifirooz, in: Proceedings of the IEEE International Electron Devices Meeting (IEDM), Technical Digest, 2008 p. 873.
4. G.H. Wang, et al., in: Proceedings of the IEEE International Electron Devices Meeting (IEDM), Technical Digest, 2007, p. 131.
5. M.L. Lee, A.J. Pitera, and E.A. Fitzgerald J. Vac. Sci. Technol. B 22 1 2004 158
6. G. Nicholas, T. Grasby, D. Fulgoni, C. Beer, J. Parsons, M. Meuris, and M. Heyns IEEE Electron Device Lett. 28 9 2007 828
7. M. Myronov, D.R. Leadley, and Y. Shiraki Appl. Phys. Lett. 94 2009 092108
8. A. Ritenour, S. Yu, M.L. Lee, N. Lu, W. Bai, A. Pitera, E.A. Fitzgerald, D.L. Kwong, D.A. Antoniadis, in: Proceedings of the IEEE International Electron Devices Meeting (IEDM), Technical Digest, 2003, p. 18.2.1.
9. M.T. Curie, S.B. Samavedam, T.A. Lango, C.W. Leitz, and E.A. Fitzgerald Appl. Phys. Lett. 72 14 1998 1718
10. S. Takeuchi, et al., Solid State Electron (2011), doi: 10.1016/j.sse.2011.01.02.
11. V.A. Shah, A. Dobbie, M. Myronov, D.J.F. Fulgoni, L.J. Nash, and D.R. Leadley Appl. Phys. Lett. 93 2008 192103
12. C. Ni Chleirigh, L. Gomez, Y. Wang, X. Wang, J.L. Hoyt, in: Proceedings of the 4th International SiGe Technology and Device Meeting (4th ISTDM), 2008, Abstract Book, p. 54.
13. M.-S. Shieh, P.-S. Chen, M.-J. Tsai, and T.F. Lei J. Electrochem. Soc. 153 2 2006 G144
14. P. Ong, L. Witters, L.H.A. Leunissen, in: Proceedings of the presentation at the International Conference on Planarization/CMP Technology (ICPT), 2010.
15. R. Loo, G. Wang, L. Souriau, J.C. Lin, S. Takeuchi, G. Brammertz, and M. Caymax J. Electrochem. Soc. 157 1 2010 H13
16. R. Loo, A. Hikavyy, F. Leys, M. Wada, K. Sano, B. De Vos, A. Pacco, M. Bargallo Gonzalez, E. Simoen, P. Verheyen, W. Vanherle, and M. Caymax, Solid State Phenom. 145146 (2009) 177.
17. F.E. Leys, R. Bonzom, R. Loo, O. Richard, B. De Jaeger, J. Van Steenbergen, K. Dessein, T. Conard, J. Rip, H. Bender, W. Vandervorst, M. Meuris, and M. Caymax Thin Solid Films 508 2006 292
18. N.D. Nguyen, R. Loo, A. Hikavyy, B. Van Daele, P. Ryan, M. Wormington, and J. Hopkins ECS Trans 10 1 2007 151 160
19. B. Pinto, J. Saito, W. Shen, L. Cheung, and A. Wang Yield Manage. Solutions 9 1 2007 28
20. J.M. Hartmann, Y. Bogumilowciz, A. Abbadie, F. Fillot, and T. Billon J. Cryst. Growth 310 2008 2493
21. B. Xie, G. Montano-Miranda, C.C. Finstad, and A.J. Muscat Mater. Sci. Semicond. Process. 8 2005 231
22. B. Onsia, T. Conard, S. De Gendt, M. Heyns, I. Hoflijk, P. Mertens, M. Meuris, G. Raskin, s. Sioncke, I. Teerlinck, A. Theuwis, J. Van Steenbergen, and C. Vinckier Solid State Phenom. 103104 2005 27
23. Y. Sato, and M. Maeda Jpn. J. Appl. Phys 33 12A 1994 6508
24. L. Souriau, T. Nguyen, E. Augendre, R. Loo, V. Terzieva, M. Caymax, S. Cristoloveanu, M. Meuris, and W. Vandervorst J. Electrochem. Soc. 156 3 2009 H208
25. J.M. Hartmann, A. Abbadie, D. Rouchon, J.P. Barnes, M. Mermoux, and T. Billoun Thin Solid Films 516 2008 4238
26. J.-S. Park, M. Curtin, J.M. Hydrick, J. Bai, M. Caroll, J.G. Fiorenza, and A. Lochtefeld J. Electrochem. Soc. 156 4 2009 H249