SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 99, Issue 7, 2011, Pages

Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

(6) Afanas'Ev, V V a Houssa, M a Stesmans, A a Merckling, C b Schram, T b Kittl, J A b

a UNIVERSITY OF LEUVEN (Belgium)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; INTERNAL PHOTOEMISSION;

CRYSTALLIZATION; ELECTRON MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; TITANIUM NITRIDE;

ALUMINUM;

EID: 80052080909 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3623439 Document Type: Article

Times cited : (56)

References (21)

1
- 0042341502
- 10.1063/1.1590743
- P. D. Ye, G. D. Wilk, B. Young, J. Kwo, S. N. G. Chu, S. Nakahara, H. J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 83, 180 (2003). 10.1063/1.1590743
- (2003) Appl. Phys. Lett. , vol.83 , pp. 180
- Ye, P.D.¹ Wilk, G.D.² Young, B.³ Kwo, J.⁴ Chu, S.N.G.⁵ Nakahara, S.⁶ Gossmann, H.J.L.⁷ Mannaerts, J.P.⁸ Hong, M.⁹ Ng, K.K.¹⁰ Bude, J.¹¹

2
- 18644372023
- GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2 O3 as gate dielectric
- DOI 10.1063/1.1861122, 063501
- P. D. Ye, B. Young, K. K. Ng, J. Bude, G. D. Wilk, S. Halder, and J. C. M. Hwang, Appl. Phys. Lett. 86, 063501 (2005). 10.1063/1.1861122 (Pubitemid 40661647)
- (2005) Applied Physics Letters , vol.86 , Issue.6 , pp. 1-3
- Ye, P.D.¹ Yang, B.² Ng, K.K.³ Bude, J.⁴ Wilk, G.D.⁵ Halder, S.⁶ Hwang, J.C.M.⁷

3
- 37549040565
- 10.1149/1.2819626
- F. Bellenger, M. Houssa, A. Delabie, V. V. Afanasev, T. Conard, M. Caymax, M. Meuris, K. DeMeyer, and M. M. Heyns, J. Electrochem. Soc. 155, G33 (2008). 10.1149/1.2819626
- (2008) J. Electrochem. Soc. , vol.155 , pp. 33
- Bellenger, F.¹ Houssa, M.² Delabie, A.³ Afanasev, V.V.⁴ Conard, T.⁵ Caymax, M.⁶ Meuris, M.⁷ Demeyer, K.⁸ Heyns, M.M.⁹

4
- 14844330746
- 3 trapping dielectric for high-temperature applications
- DOI 10.1016/j.sse.2004.09.003, PII S0038110105000432, 5th International Workshop on the Ultimate Intergration of Silicon, ULIS 2004
- M. Specht, H. Reisinger, F. Hoffmann, T. Schulz, E. Landgraf, R. J. Luyken, W. Rosner, M. Grib, and L. Risch, Solid State Electron. 49, 716 (2005). 10.1016/j.sse.2004.09.003 (Pubitemid 40340019)
- (2005) Solid-State Electronics , vol.49 , Issue.5 , pp. 716-720
- Specht, M.¹ Reisinger, H.² Hofmann, F.³ Schulz, T.⁴ Landgraf, E.⁵ Luyken, R.J.⁶ Rosner, W.⁷ Grieb, M.⁸ Risch, L.⁹

5
- 56349122800
- 10.1088/0957-4484/19/43/435202
- S. Maikap, S. Z. Rahaman, and T. C. Tien, Nanotechnology 19, 435202 (2008). 10.1088/0957-4484/19/43/435202
- (2008) Nanotechnology , vol.19 , pp. 435202
- Maikap, S.¹ Rahaman, S.Z.² Tien, T.C.³

6
- 0000861795
- 10.1063/1.102335
- M. L. Bortz and R. H. French, Appl. Phys. Lett. 55, 1955 (1989). 10.1063/1.102335
- (1989) Appl. Phys. Lett. , vol.55 , pp. 1955
- Bortz, M.L.¹ French, R.H.²

7
- 0028516419
- 10.1016/0040-6090(94)90171-6
- B. Ealet, M. H. Elyakhloufi, E. Gillet, and M. Ricci, Thin Solid Films 250, 92 (1994). 10.1016/0040-6090(94)90171-6
- (1994) Thin Solid Films , vol.250 , pp. 92
- Ealet, B.¹ Elyakhloufi, M.H.² Gillet, E.³ Ricci, M.⁴

8
- 0032489769
- Optical and electrical properties of aluminum oxide films deposited by spray pyrolysis
- DOI 10.1063/1.121156, PII S0003695198035141
- M. Aguilar-Frutis, M. Garcia, and C. Falcony, Appl. Phys. Lett. 72, 1700 (1998). 10.1063/1.121156 (Pubitemid 128671433)
- (1998) Applied Physics Letters , vol.72 , Issue.14 , pp. 1700-1702
- Aguilar-Frutis, M.¹ Garcia, M.² Falcony, C.³

9
- 33845392078
- 2
- DOI 10.1063/1.1436299
- V. V. Afanasev, M. Houssa, A. Stesmans, and M. M. Heyns, J. Appl. Phys. 91, 3079 (2002). 10.1063/1.1436299 (Pubitemid 34598779)
- (2002) Journal of Applied Physics , vol.91 , Issue.5 , pp. 3079
- Afanas'ev, V.V.¹ Houssa, M.² Stesmans, A.³ Heyns, M.M.⁴

10
- 79955994990
- 3
- DOI 10.1063/1.1501163
- V. V. Afanasev, A. Stesmans, B. J. Mrstik, and C. Zhao, Appl. Phys. Lett. 81, 1678 (2002). 10.1063/1.1501163 (Pubitemid 35037783)
- (2002) Applied Physics Letters , vol.81 , Issue.9 , pp. 1678
- Afanas'ev, V.V.¹ Stesmans, A.² Mrstik, B.J.³ Zhao, C.⁴

11
- 33644516912
- Theoretical study on dielectric response of amorphous alumina
- DOI 10.1103/PhysRevB.73.054108, 054108
- H. Momida, T. Hamada, Y. Takagi, T. Yamamoto, T. Uda, and T. Ohno, Phys. Rev. B 73, 054108 (2006). 10.1103/PhysRevB.73.054108 (Pubitemid 43292573)
- (2006) Physical Review B - Condensed Matter and Materials Physics , vol.73 , Issue.5 , pp. 1-10
- Momida, H.¹ Hamada, T.² Takagi, Y.³ Yamamoto, T.⁴ Uda, T.⁵ Ohno, T.⁶

12
- 33845453875
- 3(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy
- DOI 10.1063/1.2403902
- C. Merckling, M. El-Kazzi, G. Delhaye, L. Largeau, G. Patriarche, M. Gendry, G. Saint-Girons, and G. Hollinger, Appl. Phys. Lett. 89, 232907 (2006). 10.1063/1.2403902 (Pubitemid 44907274)
- (2006) Applied Physics Letters , vol.89 , Issue.23 , pp. 232907
- Merckling, C.¹ El-Kazzi, M.² Delhaye, G.³ Gendry, M.⁴ Saint-Girons, G.⁵ Hollinger, G.⁶ Largeau, L.⁷ Patriarche, G.⁸

13
- 34547584774
- Growth of crystalline - Al2 O3 on Si by molecular beam epitaxy: Influence of the substrate orientation
- DOI 10.1063/1.2753684
- C. Merckling, M. El-Kazzi, G. Saint-Girons, G. Hollinger, L. Largeau, G. Patriarche, V. Favre-Nicolin, and O. Marty, J. Appl. Phys. 102, 024101 (2007). 10.1063/1.2753684 (Pubitemid 47191988)
- (2007) Journal of Applied Physics , vol.102 , Issue.2 , pp. 024101
- Merckling, C.¹ El-Kazzi, M.² Saint-Girons, G.³ Hollinger, G.⁴ Largeau, L.⁵ Patriarche, G.⁶ Favre-Nicolin, V.⁷ Marty, O.⁸

14
- 38849161056
- 10.1063/1.2799091
- V. V. Afanasev and A. Stesmans, J. Appl. Phys. 102, 081301 (2007). 10.1063/1.2799091
- (2007) J. Appl. Phys. , vol.102 , pp. 081301
- Afanasev, V.V.¹ Stesmans, A.²

15
- 0014789335
- 10.1063/1.1659238
- R. J. Powell, J. Appl. Phys. 41, 2424 (1970). 10.1063/1.1659238
- (1970) J. Appl. Phys. , vol.41 , pp. 2424
- Powell, R.J.¹

16
- 0004213174
- 10.1103/PhysRevB.7.3702
- J. S. Helman and F. Sanchez-Sinencio, Phys. Rev. B 7, 3702 (1973). 10.1103/PhysRevB.7.3702
- (1973) Phys. Rev. B , vol.7 , pp. 3702
- Helman, J.S.¹ Sanchez-Sinencio, F.²

17
- 0001035776
- 10.1103/PhysRevLett.80.5176
- V. V. Afanasev and A. Stesmans, Phys. Rev. Lett. 80, 5176 (1998). 10.1103/PhysRevLett.80.5176
- (1998) Phys. Rev. Lett. , vol.80 , pp. 5176
- Afanasev, V.V.¹ Stesmans, A.²

18
- 0036567722
- Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices
- DOI 10.1016/S0022-3093(02)00962-6, PII S0022309302009626
- G. Lucovsky, J. Non-Cryst. Solids 303, 40 (2002). 10.1016/S0022-3093(02) 00962-6 (Pubitemid 34410824)
- (2002) Journal of Non-Crystalline Solids , vol.303 , Issue.1 , pp. 40-49
- Lucovsky, G.¹

19
- 34248678458
- 3
- DOI 10.1016/j.mee.2007.04.113, PII S0167931707004637, INFOS 2007
- V. V. Afanasev, S. Shamuilia, M. Badylevich, A. Stesmans, L. F. Edge, W. Tian, D. G. Schlom, J. M. J. Lopes, M. Roeckrath, and J. Schubert, Microelectron. Eng. 84, 2278 (2007). 10.1016/j.mee.2007.04.113 (Pubitemid 46777016)
- (2007) Microelectronic Engineering , vol.84 , Issue.9-10 , pp. 2278-2281
- Afanas'ev, V.V.¹ Shamuilia, S.² Badylevich, M.³ Stesmans, A.⁴ Edge, L.F.⁵ Tian, W.⁶ Schlom, D.G.⁷ Lopes, J.M.J.⁸ Roeckerath, M.⁹ Schubert, J.¹⁰

20
- 76449118137
- 10.1063/1.3294328
- V. V. Afanasev, A. Stesmans, K. Cherkaoui, and P. K. Hurley, Appl. Phys. Lett. 96, 052103 (2010). 10.1063/1.3294328
- (2010) Appl. Phys. Lett. , vol.96 , pp. 052103
- Afanasev, V.V.¹ Stesmans, A.² Cherkaoui, K.³ Hurley, P.K.⁴

21
- 79961179415
- 10.1080/10584587.2011.574041
- V. V. Afanasev, M. Houssa, and A. Stesmans, Integr. Ferroelectr. 125, 53 (2011). 10.1080/10584587.2011.574041
- (2011) Integr. Ferroelectr. , vol.125 , pp. 53
- Afanasev, V.V.¹ Houssa, M.² Stesmans, A.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.