Gallium nitride film growth using a plasma based migration enhanced afterglow chemical vapor deposition system

Japanese Journal of Applied Physics

Volumn 51, Issue 1 PART 2, 2012, Pages

  Butcher, K Scott A ^a,b   Kemp, Brad W ^a,b   Hristov, Ilian B ^a,b   Terziyska, Penka ^a   Binsted, Peter W ^a   Alexandrov, Dimiter ^a,b  

^a LAKEHEAD UNIVERSITY   (Canada)

^b Meaglow Ltd   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR; GALLIUM NITRIDE FILMS; MIGRATION ENHANCED EPITAXY; NITRIDED; ROOT MEAN SQUARE (RMS) SURFACE ROUGHNESS; SAPPHIRE SUBSTRATES;

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; GALLIUM ALLOYS; SAPPHIRE; SURFACE ROUGHNESS;

GALLIUM NITRIDE;

EID: 84857228811     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.01AF02     Document Type: Conference Paper

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