Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 2, 2010, Pages 342-346

  Kawaharazuka, Atsushi ^a   Yoshizaki, Tadashi ^b   Hiratsuka, Takato ^b   Horikoshi, Yoshiji ^b  

^a WASEDA UNIVERSITY   (Japan)

^b WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION PROCESS; ELEVATED TEMPERATURE; GA DIFFUSION; GAN GROWTH; GROWTH OF GAN; MIGRATION ENHANCED EPITAXY; NITROGEN SOURCES; RADIO FREQUENCY PLASMA; SURFACE COVERAGES;

AMMONIA; CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSCIENCE; SEMICONDUCTOR GROWTH;

SURFACE MORPHOLOGY;

EID: 77954323652     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982421     Document Type: Conference Paper

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