Growth of GaN films by migration-enhanced epitaxy

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 325-330

  Hooper, S E ^a   Foxon, C T ^a   Cheng, T S ^a   Jeffs, N J ^a   Pen, G B ^a   Lacklison, D E ^a   Orton, J W ^a   Duggan, G ^a  

^a SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; HIGH ENERGY ELECTRON DIFFRACTION; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; MIGRATION ENHANCED EPITAXY;

EPITAXIAL GROWTH;

EID: 0030685960     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)