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Volumn , Issue , 2011, Pages

Understanding temperature acceleration for NBTI

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE EXCHANGES; DEGRADATION DATA; MULTIPHONON PROCESS; NON-RADIATIVE; TEMPERATURE DEPENDENT;

EID: 84857020277     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131623     Document Type: Conference Paper
Times cited : (34)

References (17)
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  • 3
    • 78651287908 scopus 로고    scopus 로고
    • Time-dependent defect spectroscopy for characterization of border traps in metal-oxidesemiconductortransistors
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    • T. Grasser, H. Reisinger, P.-J. Wagner, and B. Kaczer, "Time-dependent defect spectroscopy for characterization of border traps in metal-oxidesemiconductortransistors," Physical Review B, vol. 82, no. 24, p. 245318, 12 2010.
    • (2010) Physical Review B , vol.82 , Issue.24 , pp. 245318
    • Grasser, T.1    Reisinger, H.2    Wagner, P.-J.3    Kaczer, B.4
  • 4
    • 8444242118 scopus 로고
    • Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
    • 1
    • C. H. Henry and D. V. Lang, "Nonradiative capture and recombination by multiphonon emission in GaAs and GaP," Physical Review B, vol. 15, no. 2, pp. 989-1016, 1 1977.
    • (1977) Physical Review B , vol.15 , Issue.2 , pp. 989-1016
    • Henry, C.H.1    Lang, D.V.2
  • 11
    • 50949120239 scopus 로고    scopus 로고
    • Negative bias temperature instability (NBTI) recovery with bake
    • 10
    • A. A. Katsetos, "Negative bias temperature instability (NBTI) recovery with bake," Microelectronics Reliability, vol. 48, pp. 1655-1659, 10 2008.
    • (2008) Microelectronics Reliability , vol.48 , pp. 1655-1659
    • Katsetos, A.A.1
  • 12
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    • Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities
    • 11
    • C. Benard, G. Math, P. Fornara, J.-L. Ogier, and D. Goguenheim, "Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities," Microelectronics Reliability, vol. 49, pp. 1008-1012, 11 2009.
    • (2009) Microelectronics Reliability , vol.49 , pp. 1008-1012
    • Benard, C.1    Math, G.2    Fornara, P.3    Ogier, J.-L.4    Goguenheim, D.5
  • 16
    • 84856994301 scopus 로고    scopus 로고
    • ser. tutorial
    • T. Grasser, in IRPS, ser. tutorial, 2011.
    • (2011) IRPS
    • Grasser, T.1
  • 17
    • 79951847514 scopus 로고    scopus 로고
    • Statistical Characterization of Trap Position, Energy, Amplitude and Time Constants by RTN Measurement of Multiple Individual Traps
    • T. Nagumo, K. Takeuchi, T. Hase, and Y. Hayashi, "Statistical Characterization of Trap Position, Energy, Amplitude and Time Constants by RTN Measurement of Multiple Individual Traps," in IEEE International Electron Device Meeting, 2010, pp. 28.3.1-28.3.4.
    • IEEE International Electron Device Meeting, 2010
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.