SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Materials Science: Materials in Electronics

Volumn 23, Issue 2, 2012, Pages 542-545

Improvement of crystal quality and UV transparence of dielectric Ga 2O 3 thin films via thermal annealing in N 2 atmosphere

(9) Liu, Yuanda a Xia, Xiaochuan a Liang, Hongwei a Zhang, Hezhi a Bian, Jiming a Liu, Yang a Shen, Rensheng a Luo, Yingmin a Du, Guotong a,b

a DALIAN UNIVERSITY OF TECHNOLOGY (China)

b JILIN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CRYSTAL QUALITIES; OPTICAL BAND GAP ENERGY; OPTICAL TRANSMITTANCE SPECTRUM; POLYCRYSTALLINE; THERMAL-ANNEALING;

AMORPHOUS FILMS; GALLIUM; GALLIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SUPERCONDUCTING FILMS; THIN FILMS; X RAY DIFFRACTION;

ANNEALING;

EID: 84856696936 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-011-0433-7 Document Type: Article

Times cited : (20)

References (25)

1
- 0030570708
- Q. Chen, M.A. Khan, J.W. Yang, C.J. Sun, M.S. Shur, H. Park, Appl. Phys. Lett. 69, 794 (1996)
- (1996) Appl. Phys. Lett. , vol.69 , pp. 794
- Chen, Q.¹ Khan, M.A.² Yang, J.W.³ Sun, C.J.⁴ Shur, M.S.⁵ Park, H.⁶

2
- 35948950279
- T. Oshima, T. Okuno, S. Fujita, Jpn. J. Appl. Phys. 46, 7217 (2007)
- (2007) Jpn. J. Appl. Phys. , vol.46 , pp. 7217
- Oshima, T.¹ Okuno, T.² Fujita, S.³

3
- 84856748113
- H. Hayashi, R. Huang, H. Ikeno, F. Oba, S. Yoshioka, I. Tanaka, S. Sonoda, Appl. Phys. Lett. 89, 181901 (2006)
- (2006) Appl. Phys. Lett. , vol.89 , pp. 181901
- Hayashi, H.¹ Huang, R.² Ikeno, H.³ Oba, F.⁴ Yoshioka, S.⁵ Tanaka, I.⁶ Sonoda, S.⁷

4
- 34547861356
- M.W. Hong, J.R. Kwo, P.C. Tsai, Y.C. Chang, M.L. Huang, C.P. Chen, T.D. Lin, Jpn. J. Appl. Phys. 46, 3167 (2007)
- (2007) Jpn. J. Appl. Phys. , vol.46 , pp. 3167
- Hong, M.W.¹ Kwo, J.R.² Tsai, P.C.³ Chang, Y.C.⁴ Huang, M.L.⁵ Chen, C.P.⁶ Lin, T.D.⁷

5
- 78049366766
- K. Chung, C.H. Lee, G.C. Yi, Science 330, 655 (2010)
- (2010) Science , vol.330 , pp. 655
- Chung, K.¹ Lee, C.H.² Yi, G.C.³

6
- 17444421589
- K. Shimamura, E.G. Villora, K. Domen, K. Yui, K. Aoki, N. Ichinose, Jpn. J. Appl. Phys. 44, L7 (2005)
- (2005) Jpn. J. Appl. Phys. , vol.44
- Shimamura, K.¹ Villora, E.G.² Domen, K.³ Yui, K.⁴ Aoki, K.⁵ Ichinose, N.⁶

7
- 77951287301
- S. Ohira, N. Arai, Phys. Status Solidi. C 5, 3116 (2008)
- (2008) Phys. Status Solidi. C , vol.5 , pp. 3116
- Ohira, S.¹ Arai, N.²

8
- 4544227733
- E.G. Villora, K. Shimamura, Y. Yoshikawa, K. Aoki, N. Ichinose, J. Cryst. Growth 270, 420 (2004)
- (2004) J. Cryst. Growth , vol.270 , pp. 420
- Villora, E.G.¹ Shimamura, K.² Yoshikawa, Y.³ Aoki, K.⁴ Ichinose, N.⁵

9
- 0000551578
- M. Orita, H. Ohta, M. Hirano, H. Hosono, Appl. Phys. Lett. 77, 4166 (2000)
- (2000) Appl. Phys. Lett. , vol.77 , pp. 4166
- Orita, M.¹ Ohta, H.² Hirano, M.³ Hosono, H.⁴

10
- 36149011447
- H.H. Tippins, Phys. Rev. 140, A316 (1965)
- (1965) Phys. Rev. , vol.140
- Tippins, H.H.¹

11
- 58749116457
- H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, Y. Yaguchi, Jpn. J. Appl. Phys. 47, 8506 (2008)
- (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 8506
- Aida, H.¹ Nishiguchi, K.² Takeda, H.³ Aota, N.⁴ Sunakawa, K.⁵ Yaguchi, Y.⁶

12
- 33846453538
- Y. Kokubun, K. Miura, F. Endo, S. Nakagomi, Appl. Phys. Lett. 90, 031912 (2007)
- (2007) Appl. Phys. Lett. , vol.90 , pp. 031912
- Kokubun, Y.¹ Miura, K.² Endo, F.³ Nakagomi, S.⁴

13
- 0037034961
- J.H. Hao, M. Cocivera, J. Phys. D Appl. Phys. 35, 433 (2002)
- (2002) J. Phys. D Appl. Phys. , vol.35 , pp. 433
- Hao, J.H.¹ Cocivera, M.²

14
- 33750724450
- S.A. Lee, J.Y. Hwang, J.P. Kim, S.Y. Jeong, C.R. Cho, Appl. Phys. Lett. 89, 182906 (2006)
- (2006) Appl. Phys. Lett. , vol.89 , pp. 182906
- Lee, S.A.¹ Hwang, J.Y.² Kim, J.P.³ Jeong, S.Y.⁴ Cho, C.R.⁵

15
- 3543104258
- H.W. Kim, N.H. Kim, C. Lee, J. Mater. Sci. 39, 3461 (2004)
- (2004) J. Mater. Sci. , vol.39 , pp. 3461
- Kim, H.W.¹ Kim, N.H.² Lee, C.³

16
- 0000752362
- M. Hong, F. Ren, J.M. Kuo, W.S. Hobson, J. Kwo, J.P. Mannaerts, J.R. Lothian, Y.K. Chen, J. Vac. Sci. Technol. B 16, 1398 (1998)
- (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 1398
- Hong, M.¹ Ren, F.² Kuo, J.M.³ Hobson, W.S.⁴ Kwo, J.⁵ Mannaerts, J.P.⁶ Lothian, J.R.⁷ Chen, Y.K.⁸

17
- 13444292472
- H.W. Kim, N.H. Kim, J. Alloy. Compd. 389, 177 (2005)
- (2005) J. Alloy. Compd. , vol.389 , pp. 177
- Kim, H.W.¹ Kim, N.H.²

18
- 2542456645
- H.W. Kim, N.H. Kim, App. Surf. Sci. 230, 301 (2004)
- (2004) App. Surf. Sci. , vol.230 , pp. 301
- Kim, H.W.¹ Kim, N.H.²

19
- 77951291027
- T. Oshima, S. Fujita, Phys. Status Solidi. C 5, 3113 (2008)
- (2008) Phys. Status Solidi. C , vol.5 , pp. 3113
- Oshima, T.¹ Fujita, S.²

20
- 42549108724
- H.W. Liang, Q.J. Feng, J.C. Sun, J.Z. Zhao, J.M. Bian, L.Z. Hu, H.Q. Zhang, Y.M. Luo, G.T. Du, Semicond. Sci. Tech. 23, 025014 (2008)
- (2008) Semicond. Sci. Tech. , vol.23 , pp. 025014
- Liang, H.W.¹ Feng, Q.J.² Sun, J.C.³ Zhao, J.Z.⁴ Bian, J.M.⁵ Hu, L.Z.⁶ Zhang, H.Q.⁷ Luo, Y.M.⁸ Du, G.T.⁹

21
- 68249101687
- J.H. Kim, K.H. Yoon, J. Mater. Sci.: Mater. Electron 20, 879 (2009)
- (2009) J. Mater. Sci.: Mater. Electron , vol.20 , pp. 879
- Kim, J.H.¹ Yoon, K.H.²

22
- 36849120982
- S. Geller, J. Chem. Phys. 33, 676 (1960)
- (1960) J. Chem. Phys. , vol.33 , pp. 676
- Geller, S.¹

23
- 0001718759
- R. Roy, V.G. Hill, E.F. Osborn, J. Am. Chem. Soc. 74, 719 (1952)
- (1952) J. Am. Chem. Soc. , vol.74 , pp. 719
- Roy, R.¹ Hill, V.G.² Osborn, E.F.³

24
- 0036565058
- J.H. Kim, P.H. Holloway, J. Vac. Sci. Technol. A 20, 928 (2002)
- (2002) J. Vac. Sci. Technol. A , vol.20 , pp. 928
- Kim, J.H.¹ Holloway, P.H.²

25
- 0000582754
- L.N. Cojocaru, A. Prodan, Rev. Roum. Phys. 19, 209 (1974)
- (1974) Rev. Roum. Phys. , vol.19 , pp. 209
- Cojocaru, L.N.¹ Prodan, A.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.