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Volumn 20, Issue 9, 2009, Pages 879-884

Influence of post-deposition annealing on the microstructure and properties of Ga 2O 3:Mn thin films deposited by RF planar magnetron sputtering

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STRUCTURES; ANNEALING TEMPERATURES; ARGON MIXTURE; CRYSTALLINITIES; CRYSTALLOGRAPHIC PLANE; LATTICE PARAMETERS; MICROSTRUCTURE AND PROPERTIES; MN-DOPED; PLANAR MAGNETRON; POST DEPOSITION ANNEALING; RADIO FREQUENCIES; SILICON (100); SUBSTRATE SURFACE;

EID: 68249101687     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9810-2     Document Type: Article
Times cited : (19)

References (18)
  • 16
    • 0003495856 scopus 로고    scopus 로고
    • Joint Committee on Powder Diffraction Standards (JCPDS) Inorganic, No. 43-1012
    • Joint Committee on Powder Diffraction Standards (JCPDS), Powder Diffraction Files, Inorganic, No. 43-1012
    • Powder Diffraction Files


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.