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Volumn 20, Issue 9, 2009, Pages 879-884
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Influence of post-deposition annealing on the microstructure and properties of Ga 2O 3:Mn thin films deposited by RF planar magnetron sputtering
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS STRUCTURES;
ANNEALING TEMPERATURES;
ARGON MIXTURE;
CRYSTALLINITIES;
CRYSTALLOGRAPHIC PLANE;
LATTICE PARAMETERS;
MICROSTRUCTURE AND PROPERTIES;
MN-DOPED;
PLANAR MAGNETRON;
POST DEPOSITION ANNEALING;
RADIO FREQUENCIES;
SILICON (100);
SUBSTRATE SURFACE;
ANNEALING;
ARGON;
GALLIUM;
GALLIUM ALLOYS;
MAGNETRONS;
MANGANESE;
MANGANESE COMPOUNDS;
MICROSTRUCTURE;
OXYGEN;
SUBSTRATES;
THIN FILMS;
X RAY DIFFRACTION;
AMORPHOUS FILMS;
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EID: 68249101687
PISSN: 09574522
EISSN: 1573482X
Source Type: Journal
DOI: 10.1007/s10854-008-9810-2 Document Type: Article |
Times cited : (19)
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References (18)
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