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Journal of Alloys and Compounds

Volumn 389, Issue 1-2, 2005, Pages 177-181

Influence of postdeposition annealing on the properties of Ga 2O3 films on SiO2 substrates

(2) Kim, Hyoun Woo a Kim, Nam Ho a

a Inha University (South Korea)

Author keywords

Chemical synthesis; Luminescence; Thin films; X ray diffraction

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; GRAIN SIZE AND SHAPE; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICA; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY DIFFRACTION;

GA2O3; POSTDEPOSTION ANNEALING; ULTRAVIOLET (UV) SPECTRAL REGIONS; ULTRAVIOLET EMISSIONS;

GALLIUM COMPOUNDS;

EID: 13444292472 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2004.05.082 Document Type: Article

Times cited : (37)

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