Annealing effects on the properties of Ga 2 O 3 thin films grown on sapphire by the metal organic chemical vapor deposition

Applied Surface Science

Volumn 230, Issue 1-4, 2004, Pages 301-306

  Kim, Hyoun Woo ^a   Kim, Nam Ho ^a  

^a Inha University   (South Korea)

Author keywords

Annealing; Ga 2 O 3; MOCVD; Thin film

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SUBSTRATES; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GA2O3; PULSED LAYER DEPOSITION; THERMAL ANNEALING;

GALLIUM COMPOUNDS;

EID: 2542456645     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.02.063     Document Type: Article

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