Wet chemical etching behavior of β-Ga2O3 single crystal

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 9, 2008, Pages 3116-3118

  Ohira, Shigeo ^a   Arai, Naoki ^a  

^a Nippon Light Metal Company Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH RATES; FLOATING ZONE METHOD; HF SOLUTIONS; IMMERSION TIME; ORIENTED SAMPLE; ROOM TEMPERATURE; SN DOPING; SN-DOPED; WET-CHEMICAL ETCHING;

CHEMICAL STABILITY; HYDROCHLORIC ACID; HYDROFLUORIC ACID; SEMICONDUCTOR DOPING; TIN; WET ETCHING;

SINGLE CRYSTALS;

EID: 77951287301     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779223     Document Type: Conference Paper

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