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Applied Physics Letters

Volumn 100, Issue 3, 2012, Pages

Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures

(8) Mazur, Yu I a Dorogan, V G a Salamo, G J a Tarasov, G G b Liang, B L c Reyner, C J c Nunna, K c Huffaker, D L c

a UNIVERSITY OF ARKANSAS (United States)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BLUE SHIFT; DECAY TIME; ENERGY SEPARATIONS; EXCITATION LASERS; GAAS; GAAS(001); INAS; NUCLEATION SITES; PHOTOLUMINESCENCE SPECTRUM; QUANTUM DOT NANOSTRUCTURES; RED SHIFT; WETTING LAYER;

ALIGNMENT; ELECTRON ENERGY LEVELS; GALLIUM ARSENIDE; INDIUM ANTIMONIDES; INDIUM ARSENIDE; LASER EXCITATION; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84856428017 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3676274 Document Type: Article

Times cited : (30)

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