High-performance 1300-nm InAs/GaAs quantum-dot lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6909, Issue , 2008, Pages

  Liu, H Y ^a,b   Hopkinson, M ^b   Groom, K ^b   Hogg, R A ^b   Mowbray, D J ^b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

High growth temperature spacer layer; Molecular beam epitaxial growth; P type modulation; Quantum dots; Semiconductor lasers

Indexed keywords

LASER APPLICATIONS; MOLECULAR BEAM EPITAXY; OPTICAL FIBERS; OPTIMIZATION; THRESHOLD CURRENT DENSITY;

DENSITY OF STATES; HIGH-GROWTH-TEMPERATURE SPACER LAYER; TEMPERATURE INSENSITIVITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 40749152676     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.765735     Document Type: Conference Paper

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