Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots

Applied Physics Letters

Volumn 78, Issue 16, 2001, Pages 2327-2329

  Sauvage, S ^a   Boucaud, P ^a   Brunhes, T ^a   Immer, V ^b   Finkman, E ^b   Gerard J M ^c  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^c Laboratoire CDP/URA 250   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035896884     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1365411     Document Type: Article

References (18)

1. K. W. Berryman, S. A. Lyon, and M. Segev, Appl. Phys. Lett. 70, 1861 (1997).
2. D. Pan, E. Towe, and S. Kennerly, Appl. Phys. Lett. 73, 1937 (1998).
3. S. Kim, H. Mohscni, M. Erdtmann, E. Michel, C. Jelen, and M. Razeghi, Appl. Phys. Lett. 73, 963 (1998).
4. S. Maimon, E. Finkman, G. Bahir, S. E. Schacham, J. M. Garcia, and P. M. Petroff, Appl. Phys. Lett. 73, 2003 (1998).
5. L. Chu, A. Zrenner, G. Böhm, and G. Abstreiter, Appl. Phys. Lett. 75, 3599 (1999).
6. B. F. Levine, J. Appl. Phys. 74, R1 (1993).
7. L. Chu, A. Zrenner, G. Böhm, and G. Abstreiter, Appl. Phys. Lett. 76, 1944 (2000).
8. The self-assembled quantum dots are grown on top of an InAs wetting layer. Outside from the dots, the wetting layer is equivalent to a thin quantum well. The associated confined states correspond to a quantum well like two-dimensional continuum. Few states are confined in these lens-shaped quantum dots. The first excited state is around 60 meV above the ground state. The next contined states are very close to the two-dimensional wetting layer states. For these states, the wave function is significantly delocalized in the layer plane.
9. S. Sauvage, P. Boucaud, F. H. Julien, J.-M. Gérard, and V. Thierry-Mieg, Appl. Phys. Lett. 71, 2785 (1997).
10. J. Y. Duboz, E. Costard, J. Nagle, J. M. Berset, J. M. Ortega, and J. M. Gérard, J. Appl. Phys. 78, 1224 (1995).
11. S. Sauvage, P. Boucaud, T. Brunhes, F. Glotin, R. Prazeres, J.-M. Ortéga, and J.-M. Gérard, Phys. Rev. B 63, 113312 (2001).
12. S. Sauvage, P. Boucaud, J.-M. Gérard, and V. Thierry-Mieg, Phys. Rev. B 58, 10562 (1998).
13. H. C. Liu, Appl. Phys. Lett. 60, 1507 (1992).
14. A. Fraenkel, A. Brandel, G. Bahir, E. Finkman, G. Livescu, and M. T. Asom, Appl. Phys. Lett. 61, 1341 (1992).
15. The small thickness of the active region limits the applied bias.
16. B. F. Levine, C. G. Bethea V. O. Shen, and R. J. Malik, Appl. Phys. Lett. 57, 383 (1990).
17. B. Legrand, B. Grandidier, J. P. Nys, D. Stievenard, J. M. Gérard, and V. Thierry-Mieg, Appl. Phys. Lett. 73, 96 (1998).
18. P. Kolev, M. J. Deen, H. C. Liu, J. M. Li, M. Buchanan, and Z. R Wasilewski, J. Appl. Phys. 87, 2400 (2000).