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Volumn 96, Issue 21, 2010, Pages

Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING LAYERS; BLUE SHIFT; CARRIER-BLOCKING LAYERS; EMISSION EFFICIENCIES; EMISSION WAVELENGTH; HIGH TEMPERATURE; INP; MID-INFRARED EMITTERS; MIDINFRARED; PHOTOLUMINESCENCE EFFICIENCY; PHOTOLUMINESCENCE SIGNALS; ROOM TEMPERATURE; THERMAL ESCAPE;

EID: 77956246641     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3436562     Document Type: Article
Times cited : (6)

References (16)
  • 2
    • 1642604058 scopus 로고    scopus 로고
    • APPLAB 0003-6951,. 10.1063/1.1655690
    • Y. Qiu and D. Uhl, Appl. Phys. Lett. APPLAB 0003-6951 84, 1510 (2004). 10.1063/1.1655690
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 1510
    • Qiu, Y.1    Uhl, D.2
  • 5
    • 67650492806 scopus 로고    scopus 로고
    • APPLAB 0003-6951,. 10.1063/1.3160738
    • W. Lei, H. H. Tan, and C. Jagadish, Appl. Phys. Lett. APPLAB 0003-6951 95, 013108 (2009). 10.1063/1.3160738
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 013108
    • Lei, W.1    Tan, H.H.2    Jagadish, C.3
  • 6
    • 33749371217 scopus 로고    scopus 로고
    • x quantum structures on InP(0 0 1) by metalorganic vapor-phase epitaxy
    • DOI 10.1016/j.jcrysgro.2006.03.012, PII S0022024806002582
    • K. Kawaguchi, M. Ekawa, T. Akiyama, H. Kuwatsuka, and M. Sugawara, J. Cryst. Growth JCRGAE 0022-0248 291, 154 (2006). 10.1016/j.jcrysgro.2006.03.012 (Pubitemid 44498546)
    • (2006) Journal of Crystal Growth , vol.291 , Issue.1 , pp. 154-159
    • Kawaguchi, K.1    Ekawa, M.2    Akiyama, T.3    Kuwatsuka, H.4    Sugawara, M.5
  • 7
    • 33846435325 scopus 로고    scopus 로고
    • x quantum structures on InP for quantum dots with 1.55-μm emission
    • DOI 10.1016/j.jcrysgro.2006.10.074, PII S0022024806010578
    • K. Kawaguchi, M. Ekawa, T. Akiyama, H. Kuwatsuka, and M. Sugawara, J. Cryst. Growth JCRGAE 0022-0248 298, 558 (2007). 10.1016/j.jcrysgro.2006.10.074 (Pubitemid 46149731)
    • (2007) Journal of Crystal Growth , vol.298 , Issue.SPEC. ISS , pp. 558-561
    • Kawaguchi, K.1    Ekawa, M.2    Akiyama, T.3    Kuwatsuka, H.4    Sugawara, M.5
  • 8
    • 70349915800 scopus 로고    scopus 로고
    • APPLAB 0003-6951,. 10.1063/1.3246165
    • W. Lei, H. H. Tan, and C. Jagadish, Appl. Phys. Lett. APPLAB 0003-6951 95, 143124 (2009). 10.1063/1.3246165
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 143124
    • Lei, W.1    Tan, H.H.2    Jagadish, C.3
  • 11
    • 77956257272 scopus 로고    scopus 로고
    • The schematic band diagram is drawn with the helof software "NEXTNANO3,"
    • The schematic band diagram is drawn with the help of software "NEXTNANO3," http://www.nextnano.de/nextnano3/.
  • 12
    • 77956241583 scopus 로고    scopus 로고
    • The band-gaenergy of InP and In0.53 Ga0.47 As can be found in the website.
    • The band-gap energy of InP and In0.53 Ga0.47 As can be found in the website: http://www.ioffe.ru/SVA/NSM/Semicond/.
  • 13
    • 25144513413 scopus 로고    scopus 로고
    • Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
    • DOI 10.1016/j.jcrysgro.2005.06.050, PII S0022024805007980
    • W. Lei, Y. H. Chen, Y. L. Wang, B. Xu, X. L. Ye, Y. P. Zeng, and Z. G. Wang, J. Cryst. Growth JCRGAE 0022-0248 284, 20 (2005). 10.1016/j.jcrysgro.2005. 06.050 (Pubitemid 41341279)
    • (2005) Journal of Crystal Growth , vol.284 , Issue.1-2 , pp. 20-27
    • Lei, W.1    Chen, Y.H.2    Wang, Y.L.3    Xu, B.4    Ye, X.L.5    Zeng, Y.P.6    Wang, Z.G.7
  • 14
    • 0035421931 scopus 로고    scopus 로고
    • Properties of InAs/InAlAs heterostructures
    • DOI 10.1088/0268-1242/16/8/313, PII S0268124201230156
    • C. Affentauschegg and H. H. Wieder, Semicond. Sci. Technol. SSTEET 0268-1242 16, 708 (2001). 10.1088/0268-1242/16/8/313 (Pubitemid 32753696)
    • (2001) Semiconductor Science and Technology , vol.16 , Issue.8 , pp. 708-714
    • Affentauschegg, C.1    Wieder, H.H.2
  • 15
    • 1242298491 scopus 로고
    • APPLAB 0003-6951,. 10.1063/1.99019
    • M. Gallant and A. Zemel, Appl. Phys. Lett. APPLAB 0003-6951 52, 1686 (1988). 10.1063/1.99019
    • (1988) Appl. Phys. Lett. , vol.52 , pp. 1686
    • Gallant, M.1    Zemel, A.2


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