In-plane self-arrangement of high-density InAs quantum dots on GaAsSb/GaAs (001) by molecular beam epitaxy

Journal of Applied Physics

Volumn 101, Issue 9, 2007, Pages

  Kanto, Toru ^a   Yamaguchi, Koichi ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL QUALITY; NANOGROOVES; NANOHOLES; STRANSKI-KRASTANOV MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34248563318     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2717570     Document Type: Conference Paper

References (10)

1. J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.76.1675 76, 1675 (1996).
2. G. Springholz, V. Holy, M. Pinczolits, and G. Bauer, Science 282, 734 (1998). 0036-8075
3. G. S. Solomon, Appl. Phys. Lett. 0003-6951 10.1063/1.1669081 84, 2073 (2004).
4. K. Akahane, T. Kawamura, K. Okino, H. Koyama, S. Lan, Y. Okada, M. Kawabe, and M. Tosa, Appl. Phys. Lett. 0003-6951 10.1063/1.122781 73, 3411 (1998).
5. K. Yamaguchi, K. Kawaguchi, and T. Kanto, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.41.L996 41, L996 (2002).
6. T. Kanto and K. Yamaguchi, Jpn. J. Appl. Phys., Part 1 44, 7690 (2005). 0021-4922
7. K. Yamaguchi and T. Kanto, J. Cryst. Growth 275, e2269 (2005). 0022-0248
8. M. Ohta, T. Kanto, and K. Yamaguchi, Jpn. J. Appl. Phys., Part 1 45, 3427 (2006). 0021-4922
9. T. Nakai and K. Yamaguchi, Jpn. J. Appl. Phys., Part 1 44, 3803 (2005). 0021-4922
10. F. M. Ross, J. Tersoff, and R. M. Tromp, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.80.984 80, 984 (1998).