Structure of InAs/GaAs quantum dots grown with Sb surfactant

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 25-28

  Timm, R ^a   Eisele, H ^a   Lenz, A ^a   Kim, T Y ^a   Streicher, F ^a   Potschke K ^a   Pohl, U W ^a   Bimberg, D ^a   Dahne M ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

GaAs; InAs; MOCVD; Quantum dot; Sb surfactant; XSTM

Indexed keywords

ANTIMONY COMPOUNDS; DEPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STOICHIOMETRY; SURFACE ACTIVE AGENTS;

INAS DEPOSITION; SB SURFACTANT; TRUNCATED PYRAMIDAL SHAPE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646470148     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.009     Document Type: Article

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