Highest density 1.3 μm InAs quantum dots covered with gradient composition InGaAs strain reduced layer grown with an As2 source using molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 12-15, 2005, Pages

  Amano, Takeru ^a   Sugaya, Takeyoshi ^a   Komori, Kazuhiro ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

As2; Gradient Composition Strain Reduced Layer; Quantum dot

Indexed keywords

COMPOSITION; GAIN CONTROL; LUMINESCENCE; MOLECULAR BEAM EPITAXY; OPTICAL DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN;

FULL WIDTH AT HALF MAXIMUM (FWHM); GROWTH RATES; STRAIN-REDUCED LAYERS (SRL); ZERO-DIMENSIONAL SYSTEMS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20444433638     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L432     Document Type: Article

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