![]() |
Volumn 129, Issue 5, 2009, Pages 456-460
|
Optical transition pathways in type-II Ga(As)Sb quantum dots
|
Author keywords
GaSb; k p; Photoreflectance; Quantum dots
|
Indexed keywords
ARSENIC;
CRYSTAL GROWTH;
ELECTRIC NETWORK ANALYSIS;
EMISSION SPECTROSCOPY;
GALLIUM;
GALLIUM ALLOYS;
LIGHT EMISSION;
LUMINESCENCE;
OPTICAL WAVEGUIDES;
PLASMA CONFINEMENT;
QUANTUM ELECTRONICS;
SEMICONDUCTOR QUANTUM WELLS;
BEST FITS;
BOWING PARAMETERS;
DOT COMPOSITIONS;
DOT EMISSIONS;
ELECTRON CONFINEMENTS;
GASB;
GROUND-STATE;
MOLECULAR-BEAM EPITAXIES;
NORMAL GROWTHS;
PHOTOREFLECTANCE;
QUANTUM DOTS;
QUANTUM WELLS;
QUANTUM-DOT STRUCTURES;
ROOM TEMPERATURES;
TRANSITION PATHWAYS;
SEMICONDUCTOR QUANTUM DOTS;
|
EID: 59849114423
PISSN: 00222313
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jlumin.2008.11.012 Document Type: Article |
Times cited : (18)
|
References (16)
|