Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony

Applied Surface Science

Volumn 257, Issue 21, 2011, Pages 8784-8787

  Chiang, C H ^a   Wu, Y H ^a   Hsieh, M C ^a   Yang, C H ^a   Wang, J F ^a   Chen, Ross C C ^a   Chang, L ^a   Chen, J F ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Antimony; InAs; Segregation; Surface quantum dot; Surfactant

Indexed keywords

ANTIMONY; III-V SEMICONDUCTORS; INDIUM ARSENIDE; NANOCRYSTALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR QUANTUM DOTS; SURFACE ACTIVE AGENTS;

BEAM EQUIVALENT PRESSURE; INAS; NON-RADIATIVE RECOMBINATIONS; ORDERS OF MAGNITUDE; PHOTOLUMINESCENCE PROPERTIES; SENSITIVE PROPERTIES; SURFACE QUANTUM DOTS; TRANSMISSION ELECTRON;

SURFACE SEGREGATION;

EID: 79960157681     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.04.006     Document Type: Article

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