Nanomechanical silicon resonators with intrinsic tunable gain and sub-nW power consumption

ACS Nano

Volumn 6, Issue 1, 2012, Pages 256-264

  Bartsch, Sebastian T ^a   Lovera, Andrea ^a   Grogg, Daniel ^a   Ionescu, Adrian M ^a  

^a EPFL   (Switzerland)

Author keywords

mixing; nanoelectromechanical systems; nanotechnology; silicon on insulator; transistor

Indexed keywords

CHARGE MODULATION; FIELD EFFECTS; FIN FIELD EFFECT TRANSISTORS; MECHANICAL MOTIONS; NANO ELECTROMECHANICAL SYSTEMS; NANOMECHANICAL MOTION; ON CHIPS; PARALLEL OPERATIONS; RADIO FREQUENCY APPLICATIONS; RESONATOR ARRAYS; ROOM TEMPERATURE; SIGNAL MIXING; SILICON ON INSULATOR; SILICON RESONATORS; SUBTHRESHOLD REGION; TIME KEEPING; ULTRASENSITIVE; VERY HIGH FREQUENCY;

INTEGRATION; MIXING; MOSFET DEVICES; NANOTECHNOLOGY; NEMS; SIGNAL PROCESSING; TRANSISTORS;

RESONATORS;

ARTICLE; CONFORMATION; ENERGY TRANSFER; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MICROELECTROMECHANICAL SYSTEM; NANOTECHNOLOGY; OSCILLOMETRY; TRANSDUCER; VIBRATION;

ENERGY TRANSFER; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MICRO-ELECTRICAL-MECHANICAL SYSTEMS; MOLECULAR CONFORMATION; NANOTECHNOLOGY; OSCILLOMETRY; TRANSDUCERS; VIBRATION;

EID: 84856153804     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn203517w     Document Type: Article

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