Electrical behavior of mis devices based on sinanoclusters embedded in sioxny and sio2 films

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Jacques, Emmanuel ^a   Pichon, Laurent ^a   Debieu, Olivier ^b   Gourbilleau, Fabrice ^b  

^a IETR   (France)

^b UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; METAL INSULATOR BOUNDARIES; NITROGEN; NITROGEN PLASMA; SILICA; SILICON NITRIDE; SILICON OXIDES; ELECTRIC PROPERTIES; EQUIPMENT; MIS DEVICES; NANOCLUSTERS; PLASMA DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON;

CARRIERS TRANSPORT; CONDUCTION MECHANISM; ELECTRICAL BEHAVIORS; METAL-INSULATOR-SEMICONDUCTOR DEVICES; REACTIVE MAGNETRON SPUTTERING; RECTIFICATION RATIO; SILICON NANOCLUSTERS; SILICON OXYNITRIDES; BIAS DEPENDENCE; IDEALITY FACTORS; LAYER THICKNESS; MIS DIODES; NITROGEN CONTENT; SI NANOCLUSTER;

MIS DEVICES; SILICON OXIDES;

EID: 84856005170     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-170     Document Type: Article

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