Effects of the interfacial layer on electrical characteristics of Al 2 O 3 /TiO 2 /Al 2 O 3 thin films for gate dielectrics

Applied Surface Science

Volumn 258, Issue 7, 2012, Pages 3089-3093

  Kim, Chang Eun ^a   Yun, Ilgu ^a  

^a Yonsei University   (South Korea)

Author keywords

Annealing; Atomic layer deposition; Electrical characterization; High k dielectric; Interfacial layer

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ANNEALING; ATOMIC LAYER DEPOSITION; CHEMICAL ANALYSIS; GATE DIELECTRICS; HIGH-K DIELECTRIC; INTERFACES (MATERIALS); LEAKAGE CURRENTS; THIN FILMS; TITANIUM DIOXIDE;

ANNEALING TEMPERATURES; CHEMICAL STATE; DIELECTRIC THIN FILMS; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; GATE DIELECTRIC LAYERS; INTERFACIAL LAYER; THERMAL-ANNEALING;

DIELECTRIC MATERIALS;

EID: 84855525349     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.11.043     Document Type: Article

References (19)

1. 2 -based gate stack breakdown Appl. Phys. Lett. 96 2010 172901
2. 3 stack as high-k gate dielectric for Si-based MOS devices IEEE Electron Device Lett. 31 2010 1014 1016
3. 2 thin films Semicond. Sci. Technol. 21 2006 1573 1579 (Pubitemid 46222403)
4. 5 mixed layers: electrical characteristics and mechanisms of conductivity Microelectron. Eng. 87 2010 668 676
5. 3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC Appl. Phys. Lett. 96 2010 042903
6. J.C. Tinoco, M. Estrada, B. Iñiguez, and A. Cerdeira Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures Microelectron. Reliab. 48 2008 370 381 (Pubitemid 351274112)
7. 2 thin films with ultra leakage currents for next generation DRAM capacitors Adv. Mater. 20 2008 1429 1435
8. 2 nanolaminates synthesized by atomic layer deposition Appl. Phys. Lett. 96 2010 162907
9. L. Shi, Y.D. Xia, B. Xu, J. Yin, and Z.G. Liu Thermal stability and electrical properties of titanium-aluminum oxide ultrathin films as high-k gate dielectric materials J. Appl. Phys. 101 2007 034102
10. 2 nanolaminates and AlTiO films on silicon Thin Solid films 515 2006 346 352 (Pubitemid 44572103)
11. x treatments IEEE Electron Device Lett. 30 2009 907 909
12. 2 thin films using RF magnetron sputtering method and study of their surface characteristics Thin Solid Films 475 2005 183 188 (Pubitemid 40206312)
13. 1-x films as high-k gate dielectrics Appl. Phys. A 90 2008 379 384 (Pubitemid 350212074)
14. 2 /Si stack Appl. Phys. Lett. 91 2007 172902
15. x Appl. Phys. Lett. 88 2006 182905
16. 2 dielectrics grown by atomic layer deposition Appl. Phys. Lett. 82 2003 106
17. R.I. Hedge, D.H. Triyoso, S.B. Samavedam, and B.E. White Jr. Hafnium zirconate gate dielectric for advanced gate stack applications J. Appl. Phys. 101 2007 074113
18. 2 (Er ∼ 15%) grown by atomic layer deposition for high-k gate stacks Appl. Phys. Lett. 96 2010 182901
19. 3 nanolaminates J. Appl. Phys. 101 2007 074113