Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures

Microelectronics Reliability

Volumn 48, Issue 3, 2008, Pages 370-381

  Tinoco, J C ^a   Estrada, M ^b   Iniguez B ^a   Cerdeira, A ^b  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATE DIELECTRICS; MOSFET DEVICES; SILICON COMPOUNDS; THIN FILMS; TITANIUM COMPOUNDS;

CONDUCTION MECHANISMS; MOS STACK STRUCTURES; SILICON OXIDE; THERMIONIC CONDUCTION MECHANISM;

MOS DEVICES;

EID: 39449119505     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.06.005     Document Type: Article

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