Endurance reliability of multilevel-cell flash memory using a ZrO2Si3N4 dual charge storage layer

IEEE Transactions on Electron Devices

Volumn 55, Issue 9, 2008, Pages 2361-2369

  Zhang, Gang ^a   Hwang, Wan Sik ^b,c   Lee, Seung Hwan ^a   Cho, Byung Jin ^d   Yoo, Won Jong ^a  

^a Sungkyunkwan University   (South Korea)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c SAMSUNG Electronics   (South Korea)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Dual charge storage layer (DCSL); Endurance reliability; Flash memory; Multiple level cell (MLC)

Indexed keywords

DATA STORAGE EQUIPMENT; DURABILITY; SILICON; SULFATE MINERALS;

DUAL CHARGE STORAGE LAYER (DCSL); ENDURANCE RELIABILITY; MULTIPLE-LEVEL CELL (MLC);

FLASH MEMORY;

EID: 50549098395     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.927396     Document Type: Article

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