Temperature compensation of silicon resonators via degenerate doping

IEEE Transactions on Electron Devices

Volumn 59, Issue 1, 2012, Pages 87-93

  Samarao, Ashwin K ^a   Ayazi, Farrokh ^b  

^a BOSCH RESEARCH AND TECHNOLOGY CENTER   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Aluminum thermomigration; degenerate boron doping; silicon micromechanical resonators; temperature compensation

Indexed keywords

BORON-DOPING; DEGENERATE BORON DOPING; MICROMECHANICAL RESONATOR; PROCESSING TIME; SILICON BULK ACOUSTIC RESONATORS; SILICON RESISTIVITY; SILICON RESONATORS; TEMPERATURE COEFFICIENT OF FREQUENCIES; TEMPERATURE COMPENSATION; THERMOMIGRATION;

ALUMINUM; BORON; BORON COMPOUNDS; CARRIER CONCENTRATION; TEMPERATURE DISTRIBUTION;

ACOUSTIC RESONATORS;

EID: 84855433056     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2172613     Document Type: Article

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