메뉴 건너뛰기




Volumn , Issue , 2009, Pages

Temperature compensation of silicon micromechanical resonators via degenerate doping

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPING; FREE CHARGE CARRIERS; HIGH QUALITY FACTORS; IN-VACUUM; MICROMECHANICAL RESONATOR; REDUCTION TECHNIQUES; SILICON BULK ACOUSTIC RESONATORS; SILICON RESONATORS; TEMPERATURE COEFFICIENT OF FREQUENCIES; TEMPERATURE COMPENSATION;

EID: 77952337062     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424221     Document Type: Conference Paper
Times cited : (71)

References (14)
  • 1
    • 34547864173 scopus 로고    scopus 로고
    • Low-impedance VHF and UHF capacitive SiBARs-Part I: Concept and fabrication
    • Aug.
    • S. Pourkamali, G. K. Ho and F. Ayazi, "Low-Impedance VHF and UHF Capacitive SiBARs-Part I: Concept and Fabrication," IEEE Transaction on Electron Devices, vol.54, no.8, pp. 2017-2023, Aug. 2007.
    • (2007) IEEE Transaction on Electron Devices , vol.54 , Issue.8 , pp. 2017-2023
    • Pourkamali, S.1    Ho, G.K.2    Ayazi, F.3
  • 2
    • 65949103424 scopus 로고    scopus 로고
    • Temperature compensation in silicon-based micro-electromechanical resonators
    • Jan.
    • F. Schoen, et al., "Temperature Compensation in Silicon-Based Micro-Electromechanical Resonators," Proc. IEEE MEMS, pp. 884-887, Jan. 2009.
    • (2009) Proc. IEEE MEMS , pp. 884-887
    • Schoen, F.1
  • 3
    • 0005684137 scopus 로고
    • Effect of doping on elastic constants of silicon
    • Dec.
    • P. Csavinszky, et al., "Effect of Doping on Elastic Constants of Silicon," Physical Review Letters, vol.132, no.6, pp 2434-2440, Dec. 1963.
    • (1963) Physical Review Letters , vol.132 , Issue.6 , pp. 2434-2440
    • Csavinszky, P.1
  • 4
    • 24244432832 scopus 로고
    • Ultrasonic attenuation and velocity changes in doped n-type germanium and p-type silicon and their use in determining an intrinsic electron and hole scattering time
    • Mar.
    • W. P. Wason, et al., "Ultrasonic attenuation and velocity changes in doped n-type germanium and p-type silicon and their use in determining an intrinsic electron and hole scattering time," Phys. Rev. Letters, vol.10, no.5, pp. 151-154, Mar. 1963.
    • (1963) Phys. Rev. Letters , vol.10 , Issue.5 , pp. 151-154
    • Wason, W.P.1
  • 5
    • 36849136187 scopus 로고
    • Effect of holes on the elastic constant C' of degenerate ptype Si
    • Dec.
    • P. Csavinszky, et al., "Effect of holes on the elastic constant C' of degenerate ptype Si," Journal of Applied Physics, vol.36, no.12, pp 3723-3727, Dec. 1965.
    • (1965) Journal of Applied Physics , vol.36 , Issue.12 , pp. 3723-3727
    • Csavinszky, P.1
  • 6
    • 34547889037 scopus 로고    scopus 로고
    • Low-impedance VHF and UHF capacitive SiBARs-Part II: Measurement and characterization
    • Aug.
    • S. Pourkamali, G.K. Ho and F. Ayazi, ""Low-Impedance VHF and UHF Capacitive SiBARs-Part II: Measurement and Characterization," IEEE Transaction on Electron Devices, vol.54, no.8, pp. 2024-2030, Aug. 2007.
    • (2007) IEEE Transaction on Electron Devices , vol.54 , Issue.8 , pp. 2024-2030
    • Pourkamali, S.1    Ho, G.K.2    Ayazi, F.3
  • 7
    • 0019071879 scopus 로고
    • Resistivity-dopant density relationship for boron-doped silicon
    • Oct
    • W.R.Thurber, et al., "Resistivity-dopant density relationship for boron-doped silicon," Journal of Electrochemical Society, vol.127, no.10, pp. 2291, Oct 1980.
    • (1980) Journal of Electrochemical Society , vol.127 , Issue.10 , pp. 2291
    • Thurber, W.R.1
  • 8
    • 20744449331 scopus 로고    scopus 로고
    • Analysis of highly doping with boron from spin-on diffusing source
    • Aug.
    • C. Iliescu, et al., "Analysis of highly doping with boron from spin-on diffusing source," Surface & Coatings Technology, vol.198, no.1-3, pp 309-313, Aug. 2005.
    • (2005) Surface & Coatings Technology , vol.198 , Issue.1-3 , pp. 309-313
    • Iliescu, C.1
  • 9
    • 0033884366 scopus 로고    scopus 로고
    • Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using flexural vibration method
    • Feb.
    • N. Ono, et al., "Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using flexural vibration method," Japanese Journal of Applied Physics, vol.39, pp 368-371, Feb. 2000.
    • (2000) Japanese Journal of Applied Physics , vol.39 , pp. 368-371
    • Ono, N.1
  • 10
    • 10944271110 scopus 로고    scopus 로고
    • VHF single-crystal silicon elliptic bulk-mode capacitive disk resonators - Part I: Design and modeling
    • DOI 10.1109/JMEMS.2004.838387
    • Z. Hao, S. Pourkamali, and F. Ayazi, "VHF Single Crystal Silicon Elliptic Bulk-Mode Capacitive Disk Resonators; Part I: Design and Modeling," IEEE Journal of Microelectromechanical Systems, vol.13, no.6, pp. 1043-1053, Dec.2004. (Pubitemid 40015587)
    • (2004) Journal of Microelectromechanical Systems , vol.13 , Issue.6 , pp. 1043-1053
    • Hao, Z.1    Pourkamali, S.2    Ayazi, F.3
  • 11
    • 0001739179 scopus 로고    scopus 로고
    • Mechanism of boron diffusion in silicon: An ab initio and kinetic Monte Carlo study
    • Nov.
    • B. Sadigh, et al., "Mechanism of boron diffusion in silicon: an ab initio and kinetic Monte Carlo study," Phys. Rev. Letters, vol.83, no.21, pp 4341-4344, Nov. 1999.
    • (1999) Phys. Rev. Letters , vol.83 , Issue.21 , pp. 4341-4344
    • Sadigh, B.1
  • 12
    • 0036573161 scopus 로고    scopus 로고
    • Determination of aluminum diffusion parameters in silicon
    • May
    • O. Krause, et al., "Determination of aluminum diffusion parameters in silicon," Journal of Applied Physics, vol.91, no.9, pp 5645-5649, May 2002.
    • (2002) Journal of Applied Physics , vol.91 , Issue.9 , pp. 5645-5649
    • Krause, O.1
  • 13
    • 33749986328 scopus 로고    scopus 로고
    • Thermomigration-based junction isolation of bulk silicon MEMS devices
    • Oct.
    • C. C. Chung and M. G. Allen, "Thermomigration-based junction isolation of bulk silicon MEMS devices," Journal of Microelectromechanical Systems, vol.15, no.5, pp 1131-1138, Oct. 2006.
    • (2006) Journal of Microelectromechanical Systems , vol.15 , Issue.5 , pp. 1131-1138
    • Chung, C.C.1    Allen, M.G.2
  • 14
    • 65949086820 scopus 로고    scopus 로고
    • Post-fabrication electrical trimming of silicon bulk acoustic resonators using joule heating
    • Jan.
    • A. K. Samarao and F. Ayazi, "Post-fabrication electrical trimming of silicon bulk acoustic resonators using joule heating," Proc. IEEE MEMS, pp 892-895, Jan. 2009.
    • (2009) Proc. IEEE MEMS , pp. 892-895
    • Samarao, A.K.1    Ayazi, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.