Thermomigration-based junction isolation of bulk silicon MEMS devices

Journal of Microelectromechanical Systems

Volumn 15, Issue 5, 2006, Pages 1131-1138

  Chung, Charles C ^a,b   Allen, Mark G ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b LV Sensors   (United States)

Author keywords

Bulk micromachining; Deep reactive ion etching (DRIE); Diodic isolation; Electrical isolation; Inductively coupled plasma (ICP); Junction isolation; Temperature gradient zone melting (TGZM); Thermomigration

Indexed keywords

BULK MICROMACHINING; DEEP REACTIVE ION ETCHING; DIODIC ISOLATION; ELECTRICAL ISOLATION; JUNCTION ISOLATION; TEMPERATURE GRADIENT ZONE MELTING; THERMOMIGRATION;

ELECTRIC BREAKDOWN; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; MICROMACHINING; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SINGLE CRYSTALS;

MICROELECTROMECHANICAL DEVICES;

EID: 33749986328     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2005.879685     Document Type: Article

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