Thin-film piezoelectric-on-silicon resonators for high-frequency reference oscillator applications

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 55, Issue 12, 2008, Pages 2596-2606

  Abdolvand, Reza ^a   Lavasani, Hossein M ^b   Ho, Gavin K ^c   Ayazi, Farrokh ^b  

^a OKLAHOMA STATE UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

BURIED OXIDE LAYERS; HIGH FREQUENCY HF; HIGH-ORDER; MOTIONAL IMPEDANCE; PERFORMANCE CHARACTERISTICS; POWER CONSUMPTION; REFERENCE OSCILLATORS; SILICON RESONATORS; SILICON-ON-INSULATOR SUBSTRATES; SINGLE TRANSISTORS; TEMPERATURE COMPENSATION; THIN FILM PIEZOELECTRIC; TRANSIMPEDANCE;

ACOUSTIC IMPEDANCE; ACOUSTIC RESONATORS; DIFFERENTIAL AMPLIFIERS; PIEZOELECTRICITY; RESONATORS;

OSCILLATORS (ELECTRONIC);

OXIDE; SILICON;

ACOUSTICS; ALGORITHM; ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; ELECTRONICS; EQUIPMENT DESIGN; IMPEDANCE; INSTRUMENTATION; MECHANICS; MICROELECTRODE; MICROMANIPULATION; NONLINEAR SYSTEM; OSCILLOMETRY; SEMICONDUCTOR; TEMPERATURE;

ACOUSTICS; ALGORITHMS; ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; ELECTRONICS; EQUIPMENT DESIGN; MECHANICS; MICROELECTRODES; MICROMANIPULATION; NONLINEAR DYNAMICS; OSCILLOMETRY; OXIDES; SILICON; TEMPERATURE; TRANSISTORS;

EID: 61849164546     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2008.976     Document Type: Article

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