Effects of the magnetic field strength on the modulated pulsed power magnetron sputtering of metallic films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 6, 2011, Pages

  Lin, Jianliang ^a   Moore, John J ^a   Sproul, William D ^b   Lee, S L ^c  

^a Department of Metallurgical and Materials Engineering   (United States)

^b Reactive Sputtering INC   (United States)

^c Benet Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLOSED FIELD UNBALANCED MAGNETRON SPUTTERING SYSTEMS; CR FILM; DIFFERENT-MAGNETIC FIELDS; DIRECT CURRENT MAGNETRON SPUTTERING; ELECTROSTATIC QUADRUPOLE; EXPERIMENTAL CONDITIONS; GAS SPECIES; ION ENERGIES; MAGNETIC FIELD STRENGTHS; MASS DISTRIBUTION; MICROSTRUCTURE AND MECHANICAL PROPERTIES; PLASMA MASS SPECTROMETERS; PLASMA PROPERTIES; PULSE LENGTH; PULSED-POWER; REPETITION FREQUENCY; TARGET POWER; TIME-AVERAGED;

ALUMINUM; CHROMIUM; COPPER; DEPOSITION; DEPOSITION RATES; FILMS; IONIZATION OF GASES; MAGNETOPLASMA; MAGNETRON SPUTTERING; PLASMA DEPOSITION; PULSE REPETITION RATE; STRENGTH OF MATERIALS; TANTALUM;

MAGNETIC FIELD EFFECTS;

EID: 84255166736     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3645612     Document Type: Article

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