The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability

Microelectronics Reliability

Volumn 52, Issue 1, 2012, Pages 29-32

  Ťapajna, Milan ^a   Killat, Nicole ^a   Chowdhury, Uttiya ^b   Jimenez, Jose L ^b   Kuball, Martin ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; GATE LEAKAGES; OPTICAL METHODS; OXIDE LAYER; SURFACE BARRIER; SURFACE OXIDATIONS; SURFACE OXIDE CONTENT; SURFACE TRAP; TRAP LEVELS; TRAPPING CHARACTERISTIC;

ACTIVATION ENERGY; GALLIUM NITRIDE;

RELIABILITY;

EID: 84155171249     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.09.009     Document Type: Conference Paper

References (15)

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