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Applied Physics A: Materials Science and Processing

Volumn 105, Issue 2, 2011, Pages 427-437

Combined continuum-atomistic modeling of ultrashort-pulsed laser irradiation of silicon

(2) Gan, Yong a Chen, J K b

a ZHEJIANG UNIVERSITY (China)

b University of Missouri (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LEVELS; CARRIER TEMPERATURE; COMPRESSIVE AND TENSILE STRESS; ENERGY TRANSPORT; FLUENCES; HYBRID METHOD; LASER FLUENCES; LATTICE TEMPERATURES; NUMBER DENSITY; PULSE DURATIONS; SHOCK STRENGTH; SILICON MATERIALS; SILICON THIN FILM; STRESS WAVE; THERMO-MECHANICAL; ULTRA-FAST; ULTRAFAST LASER INTERACTIONS; ULTRASHORT-PULSED LASER;

CARRIER CONCENTRATION; IRRADIATION; LASER BEAM EFFECTS; LASER HEATING; MOLECULAR DYNAMICS; OPTICAL PROPERTIES; REFLECTION; SEMICONDUCTING SILICON COMPOUNDS; ULTRAFAST LASERS;

PULSED LASERS;

EID: 83555176165 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-011-6573-z Document Type: Article

Times cited : (32)

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