Ultrafast laser-induced elastodynamics in single crystalline silicon part I: Model formulation

Journal of Thermal Stresses

Volumn 32, Issue 5, 2009, Pages 477-493

  Qi, Xuele ^a   Suh, C Steve ^a  

^a Department of Electrical and Computer Engineering   (United States)

Author keywords

Axisymmetric model; Multi time scale; Near field response; Silicon wafer; Staggered finite difference scheme; Ultrafast laser pulse

Indexed keywords

AXISYMMETRIC MODEL; MULTI-TIME SCALE; NEAR-FIELD RESPONSE; STAGGERED FINITE DIFFERENCE SCHEME; ULTRAFAST LASER PULSE;

BOLTZMANN EQUATION; DIFFERENCE EQUATIONS; DIFFERENTIAL EQUATIONS; IMPACT IONIZATION; IONIZATION OF LIQUIDS; LASER PULSES; LASERS; PHOTOLITHOGRAPHY; PULSED LASER APPLICATIONS; SILICON WAFERS; TIME MEASUREMENT; ULTRAFAST PHENOMENA;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70449587152     PISSN: 01495739     EISSN: 1521074X     Source Type: Journal    
DOI: 10.1080/01495730802637365     Document Type: Article

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