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Volumn 95, Issue 4, 2009, Pages

Laser wavelength effects in ultrafast near-field laser nanostructuring of Si

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; FEMTOSECOND PULSE; LASER NANO-STRUCTURING; LASER WAVELENGTH; LASER-WAVELENGTH EFFECTS; NEAR-FIELD; NEAR-FIELD SCANNING OPTICAL MICROSCOPE; SUB-DIFFRACTION; SUB-WAVELENGTH; SUBWAVELENGTH APERTURES; SURFACE MODIFICATION; ULTRA-FAST;

EID: 68249128920     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3193537     Document Type: Article
Times cited : (31)

References (27)
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    • The linear absorption optical penetration depths calculated through the optical constants of Si (Ref.) for the 400 and 800 nm irradiation are 164 nm and 25.5 μm, respectively.
    • The linear absorption optical penetration depths calculated through the optical constants of Si (Ref.) for the 400 and 800 nm irradiation are 164 nm and 25.5 μm, respectively.
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    • VΔT, where R is the reflectivity of the surface, ΔE is the laser pulse energy, C is the specific heat capacity, ρ is the material density, V is the volume and ΔT is the laser induced temperature rise. The volume in each case was calculated by incorporating the optical penetration depth and the measured lateral feature size. The calculated temperatures were 1800 and 170 000 K for the 800 and 400 nm, respectively (melting temperature for Si is 1658 K).
    • VΔT, where R is the reflectivity of the surface, ΔE is the laser pulse energy, C is the specific heat capacity, ρ is the material density, V is the volume and ΔT is the laser induced temperature rise. The volume in each case was calculated by incorporating the optical penetration depth and the measured lateral feature size. The calculated temperatures were 1800 and 170 000 K for the 800 and 400 nm, respectively (melting temperature for Si is 1658 K).


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