메뉴 건너뛰기




Volumn 48, Issue 3-4, 2005, Pages 501-509

Numerical investigation of ultrashort laser damage in semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; HEATING; LASERS;

EID: 10444263043     PISSN: 00179310     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijheatmasstransfer.2004.09.015     Document Type: Article
Times cited : (195)

References (21)
  • 2
    • 1842782206 scopus 로고
    • Physics of pulsed laser processing of semiconductors
    • R.R. Alfano (Ed.), Academic Press, Orlando, FL
    • H.M. van Driel, Physics of pulsed laser processing of semiconductors, in: R.R. Alfano (Ed.), Semiconductors Probed by Ultrafast Laser Spectroscopy, vol. II, Academic Press, Orlando, FL, 1984, pp. 57-94.
    • (1984) Semiconductors Probed by Ultrafast Laser Spectroscopy , vol.2 , pp. 57-94
    • Van Driel, H.M.1
  • 3
    • 0000977072 scopus 로고
    • Time-resolved reflectivity measurements of femtosecond-optical pulse-induced phase transitions in silicon
    • C.V. Shank, R. Yen, C. Hirlimann, Time-resolved reflectivity measurements of femtosecond-optical pulse-induced phase transitions in silicon, Phys. Rev. Lett. 50 (1983) 454-457.
    • (1983) Phys. Rev. Lett. , vol.50 , pp. 454-457
    • Shank, C.V.1    Yen, R.2    Hirlimann, C.3
  • 4
    • 0001375413 scopus 로고
    • Time-resolved study of laser-induced disorder of Si surfaces
    • H.W.K. Tom, G.D. Aumiller, C.H. Brito-Cruz, Time-resolved study of laser-induced disorder of Si surfaces, Phys. Rev. Lett. 60 (1988) 1438-1441.
    • (1988) Phys. Rev. Lett. , vol.60 , pp. 1438-1441
    • Tom, H.W.K.1    Aumiller, G.D.2    Brito-Cruz, C.H.3
  • 5
    • 0000089803 scopus 로고
    • Transient gratings and second-harmonic probing of the phase transformation of a GaAs surface under femtosecond laser irradiation
    • S.V. Govorkov, T. Schröder, I.L. Shumay, P. Heist, Transient gratings and second-harmonic probing of the phase transformation of a GaAs surface under femtosecond laser irradiation, Phys. Rev. B 46 (1992) 6864-6868.
    • (1992) Phys. Rev. B , vol.46 , pp. 6864-6868
    • Govorkov, S.V.1    Schröder, T.2    Shumay, I.L.3    Heist, P.4
  • 6
    • 0001058912 scopus 로고    scopus 로고
    • Generation of dense electron-hole plasmas in silicon
    • K. Sokolowsi-Tinten, D. von der Linde, Generation of dense electron-hole plasmas in silicon, Phys. Rev. B 61 (2000) 2643-2650.
    • (2000) Phys. Rev. B , vol.61 , pp. 2643-2650
    • Sokolowsi-Tinten, K.1    Von Der Linde, D.2
  • 7
  • 8
    • 33744631139 scopus 로고
    • Nonthermal pulsed laser annealing of Si: Plasma annealing
    • J.A. Van Vechten, R. Tsu, F.W. Saris, Nonthermal pulsed laser annealing of Si: plasma annealing, Phys. Lett. 74A (1979) 422-426.
    • (1979) Phys. Lett. , vol.74 A , pp. 422-426
    • Van Vechten, J.A.1    Tsu, R.2    Saris, F.W.3
  • 9
    • 0041360166 scopus 로고    scopus 로고
    • Ultrashort pulse damage of Si and Ge semiconductors
    • P. Allenspacher, B. Hüttner, W. Riede, Ultrashort pulse damage of Si and Ge semiconductors, SPIE 4932 (2003) 358-365.
    • (2003) SPIE , vol.4932 , pp. 358-365
    • Allenspacher, P.1    Hüttner, B.2    Riede, W.3
  • 10
    • 0001058912 scopus 로고    scopus 로고
    • Generation of dense electron-hole plasmas in silicon
    • K. Sokolowski-Tinten, D. von der Linde, Generation of dense electron-hole plasmas in silicon, Phys. Rev. B 61 (2000) 2643-2650.
    • (2000) Phys. Rev. B , vol.61 , pp. 2643-2650
    • Sokolowski-Tinten, K.1    Von Der Linde, D.2
  • 12
    • 0000572650 scopus 로고
    • Kinetics of high-density plasmas generated in Si by 1.06- and 0.53-μm picosecond laser pulses
    • H.M. van Driel, Kinetics of high-density plasmas generated in Si by 1.06- and 0.53-μm picosecond laser pulses, Phys. Rev. B 35 (1987) 8166-8176.
    • (1987) Phys. Rev. B , vol.35 , pp. 8166-8176
    • Van Driel, H.M.1
  • 14
    • 2142646514 scopus 로고    scopus 로고
    • Ultrafast thermoelasticity for short-pulse laser heating
    • J.K. Chen, J.E. Beraun, C.L. Tham, Ultrafast thermoelasticity for short-pulse laser heating, Int. J. Eng. Sci. 42 (2004) 793-807.
    • (2004) Int. J. Eng. Sci. , vol.42 , pp. 793-807
    • Chen, J.K.1    Beraun, J.E.2    Tham, C.L.3
  • 15
    • 0022665371 scopus 로고
    • Simultaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalline silicon
    • T.F. Boggess, K.M. Bohnert, K. Mansour, S.C. Moss, I.W. Boyd, A.L. Smirl, Simultaneous measurement of the two-photon coefficient and free-carrier cross section above the bandgap of crystalline silicon, IEEE J. Quant. Electron. QE-22 (1986) 360-368.
    • (1986) IEEE J. Quant. Electron. , vol.QE-22 , pp. 360-368
    • Boggess, T.F.1    Bohnert, K.M.2    Mansour, K.3    Moss, S.C.4    Boyd, I.W.5    Smirl, A.L.6
  • 16
    • 0036537318 scopus 로고    scopus 로고
    • Thermal analysis of multiphoton absorption at 193nm in volume-absorbing glass
    • Z.M. Zhang, D.H. Chen, Thermal analysis of multiphoton absorption at 193nm in volume-absorbing glass, ASME J. Heat Transfer 124 (2002) 391-394.
    • (2002) ASME J. Heat Transfer , vol.124 , pp. 391-394
    • Zhang, Z.M.1    Chen, D.H.2
  • 17
    • 0036641806 scopus 로고    scopus 로고
    • Axisymmetric modeling of femtosecond pulse laser heating on metal films
    • J.K. Chen, W.P. Latham, J.E. Beraun, Axisymmetric modeling of femtosecond pulse laser heating on metal films, Numer. Heat Transfer B 42 (2002) 1-17.
    • (2002) Numer. Heat Transfer B , vol.42 , pp. 1-17
    • Chen, J.K.1    Latham, W.P.2    Beraun, J.E.3
  • 18
    • 0000571570 scopus 로고
    • Infrared reflectivity probing of thermal and spatial properties of laser-generated carriers in germanium
    • M.I. Gallant, H.M. van Driel, Infrared reflectivity probing of thermal and spatial properties of laser-generated carriers in germanium, Phys. Rev. B 26 (1982) 2133-2146.
    • (1982) Phys. Rev. B , vol.26 , pp. 2133-2146
    • Gallant, M.I.1    Van Driel, H.M.2
  • 19
    • 0021439341 scopus 로고
    • Phenomenological model for picosecond-pulse laser annealing of semiconductors
    • D. Agassi, Phenomenological model for picosecond-pulse laser annealing of semiconductors, J. Appl. Phys. 55 (1984) 4376-4383.
    • (1984) J. Appl. Phys. , vol.55 , pp. 4376-4383
    • Agassi, D.1
  • 20
    • 0000500916 scopus 로고    scopus 로고
    • Ultrafast carrier dynamics in silicon: A two-color transient reflection grating study on a (111) surface
    • T. Sjodin, H. Petek, H.L. Dai, Ultrafast carrier dynamics in silicon: a two-color transient reflection grating study on a (111) surface, Phys. Rev. Lett. 81 (1998) 5664-5667.
    • (1998) Phys. Rev. Lett. , vol.81 , pp. 5664-5667
    • Sjodin, T.1    Petek, H.2    Dai, H.L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.