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Journal of Applied Physics

Volumn 108, Issue 10, 2010, Pages

A comprehensive model for the ultrashort visible light irradiation of semiconductors

(2) Medvedev, N a Rethfeld, B a

a University of Koblenz Landau (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMMONLY USED; COMPREHENSIVE EVALUATION; COMPREHENSIVE MODEL; CRYSTAL DAMAGE; DAMAGE THRESHOLD; DEVELOPED MODEL; DIRECT DETERMINATION; DYNAMIC CHANGES; ELECTRONIC SUBSYSTEMS; EXPERIMENTAL MEASUREMENTS; FEMTOSECOND LASER PULSE; FLUENCES; LATTICE HEATING; NEW MODEL; NON EQUILIBRIUM; OPTICAL PARAMETER; PHOTOABSORPTIONS; RATE EQUATIONS; THERMODYNAMIC DESCRIPTION; TRANSIENT REFLECTIVITY; ULTRA-SHORT LASER PULSE; VISIBLE-LIGHT IRRADIATION;

HEATING; IRRADIATION; OPTICAL PROPERTIES; PULSE GENERATORS; REFLECTION; SEMICONDUCTOR LASERS; ULTRAFAST LASERS;

ULTRASHORT PULSES;

EID: 78650255741 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3511455 Document Type: Conference Paper

Times cited : (49)

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