Generalized thermo-elastodynamics for semiconductor material subject to ultrafast laser heating. Part I: Model description and validation

International Journal of Heat and Mass Transfer

Volumn 53, Issue 1-3, 2010, Pages 41-47

  Qi, Xuele ^a   Suh, C Steve ^a  

^a Department of Electrical and Computer Engineering   (United States)

Author keywords

Axisymmetric model; Generalized thermoelasticity; Silicon wafer; Staggered finite difference; Ultrafast laser pulse

Indexed keywords

AXISYMMETRIC MODELS; BALANCE EQUATIONS; CARRIER DENSITY; COUPLED EQUATION; COUPLED THERMO-MECHANICAL; ELASTO-DYNAMICS; EXPERIMENTAL DATA; FINITE DIFFERENCE; FINITE DIFFERENCE SCHEME; FLUENCES; FREE CARRIER ABSORPTION; GENERALIZED THERMO-ELASTICITY; HYPERBOLIC ENERGY; MECHANICAL RESPONSE; MODEL DESCRIPTION; MODEL FORMULATION; NEAR-FIELD; NONTHERMAL; NUMERICAL OSCILLATION; PULSE DURATIONS; SHORT TIME SCALE; TEMPERATURE DEPENDENT; THIN STRUCTURE; TIME EVOLUTIONS; TRANSPORT DYNAMICS; TWO RELAXATION TIME; ULTRAFAST LASER HEATING; ULTRAFAST LASER PULSE;

BOLTZMANN EQUATION; DIFFERENCE EQUATIONS; ELASTICITY; IMPACT IONIZATION; IONIZATION OF LIQUIDS; LASER HEATING; LASER PULSES; LASERS; PHOTOLITHOGRAPHY; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR LASERS; THERMOELASTICITY; ULTRAFAST PHENOMENA;

SILICON WAFERS;

EID: 71749088973     PISSN: 00179310     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijheatmasstransfer.2009.10.010     Document Type: Article

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