Ultrafast laser micromachining of 3C-SiC thin films for MEMS device fabrication

International Journal of Advanced Manufacturing Technology

Volumn 39, Issue 3-4, 2008, Pages 239-250

  Pecholt, Ben ^a   Vendan, Monica ^a   Dong, Yuanyuan ^a   Molian, Pal ^a  

^a Iowa State University of Science and Technology   (United States)

Author keywords

Femtosecond laser; Hard material; Material removal mechanisms; Micromachining; Semiconductor

Indexed keywords

ABLATION; COMPOSITE MICROMECHANICS; DIELECTRIC DEVICES; EXCIMER LASERS; EXPLOSIONS; GAS LASERS; LASER ABLATION; LASERS; LITHOGRAPHY; MACHINING; MECHANISMS; MEMS; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; NONMETALS; OPTICAL DESIGN; PHOTORESISTS; PULSED LASER DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR LASERS; SILICON; SILICON CARBIDE; THICK FILMS; THIN FILMS; ULTRASHORT PULSES; VAPORIZATION;

ABLATION MECHANISMS; ABLATION THRESHOLDS; COULOMB EXPLOSION; ETCH RATES; EXCIMER LASER ABLATION; FEMTOSECOND LASER; FEMTOSECOND PULSED LASERS; HARD MATERIAL; HIGH ENERGIES; HIGH TEMPERATURES; HIGH-ACCURACY; HIGH-SPATIAL RESOLUTION; MATERIAL REMOVAL MECHANISMS; MEMS DEVICES; MICROMACHINED; NANO-SCALE MATERIALS; PHASE EXPLOSIONS; PROCESS PERFORMANCE; PULSE ENERGIES; RAPID MANUFACTURING; REACTIVE ION; SEMICONDUCTOR; SENSOR APPLICATIONS; SIC THIN FILMS; SILICON SUBSTRATES; THERMAL DAMAGE; THIN DIAPHRAGMS; ULTRA-FAST LASERS; ULTRAFAST MELTING;

PULSED LASER APPLICATIONS;

EID: 52549092413     PISSN: 02683768     EISSN: 14333015     Source Type: Journal    
DOI: 10.1007/s00170-007-1223-5     Document Type: Article

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