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Applied Physics A: Materials Science and Processing

Volumn 105, Issue 3, 2011, Pages 763-767

Band alignment and interfacial properties of atomic layer deposited (TiO 2) x (Al 2O 3) 1-x gate dielectrics on Ge

(6) Li, Xue Fei a Fu, Ying Ying a Liu, Xiao Jie a Li, Ai Dong a Li, Hui a Wu, Di a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; ATOMIC LAYER DEPOSITED; BAND ALIGNMENTS; CAPACITANCE-EQUIVALENT THICKNESS; CONDUCTION BAND OFFSET; GATE-LEAKAGE CURRENT; HIGH-RESOLUTION TEM; INTERFACIAL PROPERTY; ISO-PROPOXIDE; SHARP INTERFACE; TIO; TRIMETHYLALUMINIUM; X RAY PHOTOEMISSION SPECTROSCOPY;

ALIGNMENT; ALUMINUM; ATOMIC LAYER DEPOSITION; GERMANIUM; LEAKAGE CURRENTS; PHOTOELECTRON SPECTROSCOPY; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY;

GATE DIELECTRICS;

EID: 83555174385 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-011-6511-0 Document Type: Article

Times cited : (8)

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