Band gap engineering for la aluminate dielectrics on Si (100)

Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

  Jin, Hua ^a   Cho, Young Joon ^b   Oh, Suhk Kun ^b   Kang, Hee Jae ^b   Park, Ju Chul ^c   Heo, Sung ^c   Lee, Jae Cheol ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Chungbuk National University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC SPECTROSCOPY; CONDUCTION BANDS; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MOBILITY; ENERGY DISSIPATION; ENERGY GAP; HETEROJUNCTIONS; LANTHANUM; OZONE WATER TREATMENT;

AL CONTENTS; ATOMIC LAYERS; BAND GAPS; BAND-GAP ENGINEERINGS; CONDUCTION BAND OFFSETS; REFLECTION ELECTRON ENERGY LOSS SPECTROSCOPIES; SI(1 0 0 ); VALENCE BAND OFFSETS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 51849147427     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2964181     Document Type: Article

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